EP 1479100 A1 20041124 - METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE HAVING DIFFERENT METAL SILICIDE PORTIONS
Title (en)
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE HAVING DIFFERENT METAL SILICIDE PORTIONS
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS MIT VERSCHIEDENEN METALLSILIZIDTEILEN
Title (fr)
PROCEDE DE FABRICATION D'UN DISPOSITIF SEMI-CONDUCTEUR COMPORTANT DIFFERENTES PORTIONS DE SILICIURE METALLIQUE
Publication
Application
Priority
- DE 10208728 A 20020228
- US 0241089 W 20021220
- US 26092602 A 20020930
Abstract (en)
[origin: WO03079424A1] A method is disclosed in which differing metal layers are sequentially deposited on silicon-containing regions so that the type and thickness of the metal layers may be adapted to specific characteristics of the underlying silicon-containing regions. Subsequently, a heat treatment is performed to convert the metals into metal silicides so as to improve the electrical conductivity of the silicon-containing regions. In this way, silicide portions may be formed that are individually adapted to specific silicon-containing regions so that device performance of individual semiconductor elements or the overall performance of a plurality of semiconductor elements may be significantly improved. Moreover, a semiconductor device is disclosed comprising at least two silicon-containing regions having formed therein differing silicide portions, wherein at least one silicide portion comprises a noble metal.
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 21/336 (2006.01)
CPC (source: EP)
H01L 21/823418 (2013.01); H01L 21/823443 (2013.01); H01L 29/665 (2013.01)
Citation (search report)
See references of WO 03079424A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SI SK TR
DOCDB simple family (publication)
WO 03079424 A1 20030925; AU 2002365054 A1 20030929; CN 100481333 C 20090422; CN 1623221 A 20050601; EP 1479100 A1 20041124; JP 2005520341 A 20050707; TW 200303603 A 20030901; TW I277174 B 20070321
DOCDB simple family (application)
US 0241089 W 20021220; AU 2002365054 A 20021220; CN 02828417 A 20021220; EP 02807094 A 20021220; JP 2003577322 A 20021220; TW 92104156 A 20030227