EP 1487013 A3 20060719 - SONOS memory device and method of manufacturing the same
Title (en)
SONOS memory device and method of manufacturing the same
Title (de)
SONOS-Speicherzelle und Herstellungsverfahren derselben
Title (fr)
Cellule mémoire de type SONOS et son procédé de fabrication
Publication
Application
Priority
- KR 20030037136 A 20030610
- KR 20030063362 A 20030909
Abstract (en)
[origin: EP1487013A2] A SONOS memory device and a method of manufacturing the same are provided. The SONOS memory device includes a substrate and a multifunctional device formed on the substrate (40) and having switching and data storing functions. The multifunctional device includes first and second impurities areas, a channel formed between the first and second impurities areas (42, 44), and a stacked material (60) formed on the channel for data storage. The stacked material for data storage is formed by sequentially stacking a tunneling oxide layer (48), a memory node layer (50) in which data is stored, a blocking layer (52), and an electrode layer (54).
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/8247 (2006.01); H01L 27/115 (2006.01); H01L 29/51 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01)
CPC (source: EP US)
H01L 29/40117 (2019.08 - EP US)
Citation (search report)
- [X] US 2002089023 A1 20020711 - YU ZHIYI [US], et al
- [X] US 6291867 B1 20010918 - WALLACE ROBERT M [US], et al
- [A] US 2002115252 A1 20020822 - HAUKKA SUVI P [FI], et al
- [A] US 2002190302 A1 20021219 - BOJARCZUK ALEXANDER [US], et al
- [A] DE 10228768 A1 20030116 - SAMSUNG ELECTRONICS CO LTD [KR]
- [A] US 2002149065 A1 20021017 - KOYAMA MASATO [JP], et al
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
EP 1487013 A2 20041215; EP 1487013 A3 20060719; CN 100483716 C 20090429; CN 1574361 A 20050202; JP 2005005715 A 20050106; US 2004251489 A1 20041216; US 2007296026 A1 20071227; US 8217445 B2 20120710
DOCDB simple family (application)
EP 04253382 A 20040607; CN 200410076664 A 20040610; JP 2004172645 A 20040610; US 86449904 A 20040610; US 89669807 A 20070905