EP 1490901 A1 20041229 - METHOD FOR FORMING AN IMPROVED METAL SILICIDE CONTACT TO A SILICON-CONTAINING CONDUCTIVE REGION
Title (en)
METHOD FOR FORMING AN IMPROVED METAL SILICIDE CONTACT TO A SILICON-CONTAINING CONDUCTIVE REGION
Title (de)
HERSTELLUNG EINES VERBESSERTEN METALL-SILIZID-KONTAKTES ZU EINEM SILIZIUM ENTHALTENDEN LEITENDEN BEREICH
Title (fr)
PROCEDE DE FORMATION D'UN CONTACT AMELIORE AUX SILICIURES DE METAUX SUR UNE REGIO CONDUCTRICE CONTENANT DU SILICIUM
Publication
Application
Priority
- DE 10214065 A 20020328
- US 0240806 W 20021220
- US 28266502 A 20021029
Abstract (en)
[origin: WO03083936A1] A layer stack (220) comprising at least three material layers (221, 222, and 223) is provided on a silicon-containing conductive region to form a silicide portion (208) on and in the silicon-containing conductive region, wherein the layer (221) next to the silicon provides the metal atoms for the silicide reaction, the intermediate layer (222) is a metal-nitrogen-compound formed by supplying a nitrogen containing as during deposition, and for formation of the top layer (223), supply for said gas is discontinued. The method may be carried out as an in situ method, thereby significantly improving throughput and deposition tool performance compared to typical prior art processes, in which at least two deposition chambers have to be used
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/336 (2006.01); H01L 21/768 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01)
CPC (source: EP)
H01L 21/28052 (2013.01); H01L 21/28518 (2013.01); H01L 21/76841 (2013.01); H01L 29/4933 (2013.01); H01L 29/665 (2013.01)
Citation (search report)
See references of WO 03083936A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SI SK TR
DOCDB simple family (publication)
WO 03083936 A1 20031009; AU 2002351407 A1 20031013; CN 100380625 C 20080409; CN 1623227 A 20050601; EP 1490901 A1 20041229; JP 2005522035 A 20050721; TW 200307988 A 20031216; TW I263266 B 20061001
DOCDB simple family (application)
US 0240806 W 20021220; AU 2002351407 A 20021220; CN 02828614 A 20021220; EP 02787066 A 20021220; JP 2003581256 A 20021220; TW 92105990 A 20030319