EP 1492907 A4 20080109 - ELECTROPOLISHING AND/OR ELECTROPLATING APPARATUS AND METHODS
Title (en)
ELECTROPOLISHING AND/OR ELECTROPLATING APPARATUS AND METHODS
Title (de)
ELEKTROPOLIER- UND/ODER GALVANISIERVORRICHTUNG UND -VERFAHREN
Title (fr)
APPAREIL ET PROCEDES DE POLISSAGE ET/OU DE PLACAGE ELECTROLYTIQUES
Publication
Application
Priority
- US 0310725 W 20030408
- US 37092902 P 20020408
- US 37095602 P 20020408
- US 37095502 P 20020408
- US 37091902 P 20020408
- US 37254202 P 20020414
- US 37256702 P 20020414
- US 37256602 P 20020414
- US 39046002 P 20020621
Abstract (en)
[origin: WO03087436A1] In one aspect of the present invention, exemplary apparatus and methods are provided for electropolishing and/or electroplating processes for semiconductor wafers. One exemplary apparatus includes a cleaning module having an edge clean assembly (930) to remove metal residue on the bevel or edge portion of a wafer (901). The edge cleaning apparatus includes a nozzle head (1030) configured to supply a liquid and a gas to a major surface of the wafer, and supplies the gas radially inward of the location the liquid is supplied to reduce the potential of the liquid from flowing radially inward to the metal film formed on the wafer.
IPC 1-7
IPC 8 full level
C25D 7/12 (2006.01); C25D 17/06 (2006.01); C25D 19/00 (2006.01); C25F 3/30 (2006.01); C25F 7/00 (2006.01); H01L 21/00 (2006.01); H01L 21/288 (2006.01); H01L 21/304 (2006.01); H01L 21/683 (2006.01); H01L 21/687 (2006.01); H01L 21/677 (2006.01)
CPC (source: EP KR US)
C25D 7/12 (2013.01 - EP KR US); C25D 17/001 (2013.01 - EP KR US); C25F 3/30 (2013.01 - KR); C25F 7/00 (2013.01 - EP KR US); H01L 21/2885 (2013.01 - EP US); H01L 21/67051 (2013.01 - EP KR US); H01L 21/6708 (2013.01 - EP KR US); H01L 21/6838 (2013.01 - EP KR US); H01L 21/68707 (2013.01 - EP KR US); H01L 21/2885 (2013.01 - KR); H01L 21/67769 (2013.01 - EP KR US)
Citation (search report)
- [Y] WO 0033356 A2 20000608 - ACM RES INC [US], et al
- [Y] WO 0060414 A1 20001012 - SILICON VALLEY GROUP THERMAL [US]
- See references of WO 03087436A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 03087436 A1 20031023; AU 2003226319 A1 20031027; CA 2479794 A1 20031023; CN 100430526 C 20081105; CN 101353810 A 20090128; CN 101353810 B 20120215; CN 1653211 A 20050810; EP 1492907 A1 20050105; EP 1492907 A4 20080109; JP 2005522585 A 20050728; JP 2006319348 A 20061124; JP 2006328543 A 20061207; JP 2007051377 A 20070301; JP 2007077501 A 20070329; KR 20040099407 A 20041126; SG 159384 A1 20100330; TW 200402821 A 20040216; TW I274393 B 20070221; US 2005218003 A1 20051006
DOCDB simple family (application)
US 0310725 W 20030408; AU 2003226319 A 20030408; CA 2479794 A 20030408; CN 03810206 A 20030408; CN 200810212837 A 20030408; EP 03746651 A 20030408; JP 2003584368 A 20030408; JP 2006159680 A 20060608; JP 2006189857 A 20060710; JP 2006227700 A 20060824; JP 2006282453 A 20061017; KR 20047015977 A 20030408; SG 2006069926 A 20030408; TW 92107906 A 20030407; US 51052204 A 20041006