EP 1494821 A1 20050112 - FLUID ASSISTED CRYOGENIC CLEANING
Title (en)
FLUID ASSISTED CRYOGENIC CLEANING
Title (de)
FLUIDUNTERSTÜTZTE KRYOGENE REINIGUNG
Title (fr)
NETTOYAGE CRYOGENIQUE ASSISTE PAR FLUIDE
Publication
Application
Priority
- US 0310354 W 20030403
- US 36985202 P 20020405
- US 36985302 P 20020405
- US 32422102 A 20021219
- US 40314703 A 20030331
Abstract (en)
[origin: WO03086668A1] The present invention is directed to fluid assisted cryogenic cleaning of a substrate surface requiring precision cleaning such as semiconductors, metals, and dielectric films. The process comprises the steps of applying a fluid selected from the group consisting of high vapor pressure liquids, reactive gases, and vapors of reactive liquids onto the substrate surface followed by or simultaneously with cryogenic cleaning of the substrate surface to remove contaminants.
IPC 1-7
IPC 8 full level
B08B 3/00 (2006.01); B08B 3/04 (2006.01); B08B 3/08 (2006.01); B08B 3/10 (2006.01); B08B 7/00 (2006.01); B24C 1/00 (2006.01); C23G 5/00 (2006.01); C23G 5/028 (2006.01); H01L 21/02 (2006.01); H01L 21/304 (2006.01); H01L 21/00 (2006.01)
CPC (source: EP KR)
B08B 3/04 (2013.01 - EP); B08B 7/0092 (2013.01 - EP); B24C 1/003 (2013.01 - EP); C23G 5/00 (2013.01 - EP); H01L 21/02101 (2013.01 - EP); H01L 21/304 (2013.01 - KR); H01L 21/67051 (2013.01 - EP)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 03086668 A1 20031023; AU 2003233485 A1 20031027; CN 1665609 A 20050907; EP 1494821 A1 20050112; EP 1494821 A4 20091125; JP 2005522056 A 20050721; KR 20040098054 A 20041118
DOCDB simple family (application)
US 0310354 W 20030403; AU 2003233485 A 20030403; CN 03810362 A 20030403; EP 03728337 A 20030403; JP 2003583667 A 20030403; KR 20047015867 A 20030403