Global Patent Index - EP 1495161 A2

EP 1495161 A2 20050112 - ELECTROPOLISHING AND ELECTROPLATING METHODS

Title (en)

ELECTROPOLISHING AND ELECTROPLATING METHODS

Title (de)

ELEKTROPOLIER- UND GALVANISIERVERFAHREN

Title (fr)

PROCEDES D'ELECTROPOLISSAGE ET D'ELECTRODEPOSITION

Publication

EP 1495161 A2 20050112 (EN)

Application

EP 03746750 A 20030411

Priority

  • US 0311417 W 20030411
  • US 37226302 P 20020412
  • US 38213302 P 20020521
  • US 38782602 P 20020608
  • US 39831602 P 20020724

Abstract (en)

[origin: WO03088316A2] In one aspect of the present invention, an exemplary method is provided for electroplating a conductive film on a wafer. The method includes electroplating a metal film on a semiconductor structure having recessed regions and non-recessed region within a first current density range before the metal layer is planar above recessed regions of a first density, and electroplating within a second current density range after the metal layer is planar above the recessed regions. The second current density range is greater than the first current density range. In one example, the method further includes electroplating in the second current density range until the metal layer is planar above recessed regions of a second density, the second density being greater than the first density, and electroplating within a third current density range thereafter.

IPC 1-7

C25D 5/00; C25D 5/48; C25D 5/52; C25D 5/50; C25D 5/08; B23H 11/00; B23H 3/00; B23H 5/00; B23H 7/00; B23H 9/00

IPC 8 full level

C25D 5/18 (2006.01); C25D 7/12 (2006.01); H01L 21/288 (2006.01); H01L 21/3205 (2006.01); H01L 21/768 (2006.01)

CPC (source: EP KR US)

C25D 3/02 (2013.01 - EP US); C25D 3/38 (2013.01 - EP US); C25D 5/18 (2013.01 - EP US); C25D 5/611 (2020.08 - EP US); C25D 5/617 (2020.08 - EP US); C25D 7/123 (2013.01 - EP US); H01L 21/288 (2013.01 - KR); H01L 21/2885 (2013.01 - EP US); H01L 21/304 (2013.01 - KR); H01L 21/76834 (2013.01 - EP US); H01L 21/7684 (2013.01 - EP US); H01L 21/76877 (2013.01 - EP US)

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

DOCDB simple family (publication)

WO 03088316 A2 20031023; WO 03088316 A3 20031231; AU 2003226367 A1 20031027; AU 2003226367 A8 20031027; CA 2479873 A1 20031023; CN 1685086 A 20051019; CN 1685086 B 20101013; EP 1495161 A2 20050112; EP 1495161 A4 20060628; JP 2005522587 A 20050728; JP 2006200043 A 20060803; KR 20040097337 A 20041117; TW 200402781 A 20040216; TW I267134 B 20061121; US 2006049056 A1 20060309

DOCDB simple family (application)

US 0311417 W 20030411; AU 2003226367 A 20030411; CA 2479873 A 20030411; CN 03808166 A 20030411; EP 03746750 A 20030411; JP 2003585151 A 20030411; JP 2006108820 A 20060411; KR 20047016217 A 20030411; TW 92108452 A 20030411; US 51065604 A 20041007