EP 1500108 A2 20050126 - SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD FOR A SEMICONDUCTOR MEMORY DEVICE
Title (en)
SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD FOR A SEMICONDUCTOR MEMORY DEVICE
Title (de)
HALBLEITERSPEICHEREINRICHTUNG UND BETRIEBSVERFAHREN FÜR EINE HALBLEITERSPEICHEREINRICHTUNG
Title (fr)
DISPOSITIF DE MEMOIRE A SEMI-CONDUCTEUR ET PROCEDE POUR FAIRE FONCTIONNER UN TEL DISPOSITIF DE MEMOIRE A SEMI-CONDUCTEUR
Publication
Application
Priority
- DE 0301024 W 20030327
- DE 10218785 A 20020426
Abstract (en)
[origin: WO03092011A2] A magneto-resistive semiconductor memory device (10) is disclosed, in which memory cells (30) are swept with a magnetic field (H) by means of a magnetic field sweeping device (40) such that hard magnetic layers (31h) on the swept memory cells (30) may be impressed with a desired set magnetisation (Msoll).
IPC 1-7
IPC 8 full level
G11C 11/15 (2006.01); G11C 11/16 (2006.01); H01L 21/8246 (2006.01); H01L 27/105 (2006.01); H01L 43/08 (2006.01)
CPC (source: EP KR US)
G11C 11/16 (2013.01 - KR US); G11C 11/1675 (2013.01 - EP); H10B 61/00 (2023.02 - KR)
Citation (search report)
See references of WO 03092011A2
Designated contracting state (EPC)
DE FR GB IE IT NL
DOCDB simple family (publication)
WO 03092011 A2 20031106; WO 03092011 A3 20040401; CN 1650368 A 20050803; DE 10218785 A1 20031113; EP 1500108 A2 20050126; JP 2005528721 A 20050922; KR 20040102181 A 20041203; TW 200308085 A 20031216; TW I234878 B 20050621; US 2006275928 A1 20061207
DOCDB simple family (application)
DE 0301024 W 20030327; CN 03809183 A 20030327; DE 10218785 A 20020426; EP 03718640 A 20030327; JP 2004500296 A 20030327; KR 20047017261 A 20030327; TW 92106845 A 20030326; US 51261505 A 20050630