EP 1502308 A1 20050202 - ENHANCED CUTOFF FREQUENCY SILICON GERMANIUM TRANSISTOR
Title (en)
ENHANCED CUTOFF FREQUENCY SILICON GERMANIUM TRANSISTOR
Title (de)
SILIZIUM-GERMANIUM-TRANSISTOR MIT ERWEITERTER GRENZFREQUENZ
Title (fr)
TRANSISTOR AU GERMANIUM-SILICIUM A FREQUENCE DE COUPURE AMELIOREE
Publication
Application
Priority
US 0213315 W 20020426
Abstract (en)
[origin: WO03092079A1] A bipolar transistor for a small signal amplifier that has improved Early voltages, and hence enhanced cutoff frequency. The SiGe layer (14) has a thickness (t) and a Ge content that is greater than the stability limit. The misfit dislocations do not create appreciable charge trapping sites, and do not extend into the overlying base/collector junction, such that performance is improved without yield degradation.
IPC 1-7
IPC 8 full level
H01L 21/331 (2006.01); H01L 29/10 (2006.01); H01L 29/737 (2006.01); H01L 31/0328 (2006.01)
CPC (source: EP KR)
H01L 29/1004 (2013.01 - EP); H01L 29/66242 (2013.01 - EP); H01L 29/73 (2013.01 - KR); H01L 29/737 (2013.01 - KR); H01L 29/7378 (2013.01 - EP); H01L 31/0328 (2013.01 - KR)
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
WO 03092079 A1 20031106; AU 2002305254 A1 20031110; CN 1625811 A 20050608; EP 1502308 A1 20050202; EP 1502308 A4 20090318; JP 2005524233 A 20050811; JP 4223002 B2 20090212; KR 100754561 B1 20070905; KR 20040103974 A 20041209
DOCDB simple family (application)
US 0213315 W 20020426; AU 2002305254 A 20020426; CN 02828762 A 20020426; EP 02734064 A 20020426; JP 2004500339 A 20020426; KR 20047016720 A 20020426