EP 1502308 A4 20090318 - ENHANCED CUTOFF FREQUENCY SILICON GERMANIUM TRANSISTOR
Title (en)
ENHANCED CUTOFF FREQUENCY SILICON GERMANIUM TRANSISTOR
Title (de)
SILIZIUM-GERMANIUM-TRANSISTOR MIT ERWEITERTER GRENZFREQUENZ
Title (fr)
TRANSISTOR AU GERMANIUM-SILICIUM A FREQUENCE DE COUPURE AMELIOREE
Publication
Application
Priority
US 0213315 W 20020426
Abstract (en)
[origin: WO03092079A1] A bipolar transistor for a small signal amplifier that has improved Early voltages, and hence enhanced cutoff frequency. The SiGe layer (14) has a thickness (t) and a Ge content that is greater than the stability limit. The misfit dislocations do not create appreciable charge trapping sites, and do not extend into the overlying base/collector junction, such that performance is improved without yield degradation.
IPC 1-7
IPC 8 full level
H01L 21/331 (2006.01); H01L 29/10 (2006.01); H01L 29/737 (2006.01); H01L 31/0328 (2006.01)
CPC (source: EP KR)
H01L 29/1004 (2013.01 - EP); H01L 29/66242 (2013.01 - EP); H01L 29/73 (2013.01 - KR); H01L 29/737 (2013.01 - KR); H01L 29/7378 (2013.01 - EP); H01L 31/0328 (2013.01 - KR)
Citation (search report)
- [XY] US 2002038874 A1 20020404 - EGASHIRA KATSUMI [JP]
- [X] EP 1139407 A1 20011004 - ST MICROELECTRONICS SA [FR]
- [X] EP 1065728 A2 20010103 - MATSUSHITA ELECTRIC IND CO LTD [JP]
- [X] US 5266504 A 19931130 - BLOUSE JEFFREY L [US], et al
- [X] DE 4102888 A1 19910801 - TOSHIBA KAWASAKI KK [JP]
- [Y] US 2002024061 A1 20020228 - KONDO MASAO [JP], et al
- [X] YUKI K ET AL: "BANDGAP AND STRAIN ENGINEERING IN SIGEC HETEROJUNCTION BIPOLAR TRANSISTORS", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, TOKYO,JP, vol. 40, no. 4B, PART 01, 1 April 2001 (2001-04-01), pages 2633 - 2636, XP001078188, ISSN: 0021-4922
- See references of WO 03092079A1
Designated contracting state (EPC)
AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR
DOCDB simple family (publication)
WO 03092079 A1 20031106; AU 2002305254 A1 20031110; CN 1625811 A 20050608; EP 1502308 A1 20050202; EP 1502308 A4 20090318; JP 2005524233 A 20050811; JP 4223002 B2 20090212; KR 100754561 B1 20070905; KR 20040103974 A 20041209
DOCDB simple family (application)
US 0213315 W 20020426; AU 2002305254 A 20020426; CN 02828762 A 20020426; EP 02734064 A 20020426; JP 2004500339 A 20020426; KR 20047016720 A 20020426