EP 1508165 A2 20050223 - METHOD FOR THE PRODUCTION OF A MEMORY CELL, MEMORY CELL AND MEMORY CELL ARRANGEMENT
Title (en)
METHOD FOR THE PRODUCTION OF A MEMORY CELL, MEMORY CELL AND MEMORY CELL ARRANGEMENT
Title (de)
VERFAHREN ZUM HERSTELLEN EINER SPEICHERZELLE, SPEICHERZELLE UND SPEICHERZELLEN-ANORDNUNG
Title (fr)
PROCEDE POUR PRODUIRE UNE CELLULE DE MEMOIRE, CELLULE DE MEMOIRE ET ENSEMBLE DE CELLULES DE MEMOIRE
Publication
Application
Priority
- DE 0301699 W 20030526
- DE 10223505 A 20020527
Abstract (en)
[origin: WO03100841A2] The invention relates to a method for the production of a memory cell, a memory cell and a memory cell arrangement. According to the inventive method for the production of a memory cell, a first gate insulating layer is formed on an auxiliary substrate and a floating gate is formed on the first gate insulating layer. An electrically insulating layer is formed on the floating gate and a memory gate electrode is formed on the electrically insulating layer. A substrate is fixed to the memory gate electrode and the auxiliary substrate is partially removed. A second gate-insulating layer is formed on part of an open surface area of the auxiliary substrate and a read gate electrode is formed on the second gate insulating layer. Two source/drain areas are formed between a channel area on an open surface area of the remaining material of the auxiliary substrate such that the channel area at least partially laterally overlaps with the floating gate and with the read gate electrode.
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/336 (2006.01); H01L 21/8247 (2006.01); H01L 21/84 (2006.01); H01L 27/115 (2006.01); H01L 27/12 (2006.01); H01L 29/788 (2006.01); G11C 16/04 (2006.01)
CPC (source: EP US)
H01L 21/84 (2013.01 - EP US); H01L 27/1203 (2013.01 - EP US); H01L 29/40114 (2019.07 - EP US); H01L 29/40117 (2019.07 - EP US); H01L 29/66825 (2013.01 - EP US); H01L 29/7881 (2013.01 - EP US); H01L 29/7883 (2013.01 - EP US); H10B 41/30 (2023.02 - EP US); H10B 69/00 (2023.02 - EP US); G11C 16/0416 (2013.01 - EP US); G11C 16/0483 (2013.01 - EP US)
Citation (search report)
See references of WO 03100841A2
Designated contracting state (EPC)
DE
DOCDB simple family (publication)
WO 03100841 A2 20031204; WO 03100841 A3 20040325; DE 10223505 A1 20031211; EP 1508165 A2 20050223; US 2005157583 A1 20050721; US 7195978 B2 20070327
DOCDB simple family (application)
DE 0301699 W 20030526; DE 10223505 A 20020527; EP 03740036 A 20030526; US 99981004 A 20041129