Title (en)

Gate shorted to body thin film transistor, manufacturing method thereof and display including the same

Title (de)

Dünnschicht-Transistor mit Kurzschluss zwischen Gate und Substrat, zugehöriges Herstellungsverfahren und Anzeigevorrichtung unter dessen Verwendung

Title (fr)

Transistor a couche mince avec court-circuit entre la grille et le substrat, son procédé de fabrication et dispositif d'affichage l'utilisant

Publication

EP 1508921 A3 20050629 (EN)

Application

EP 04090312 A 20040812

Priority

KR 20030056594 A 20030814

Abstract (en)

[origin: EP1508921A2] A TFT including a gate metallic layer, a body layer doped with a dopant having a first polarity, a source layer and a drain layer doped with a dopant having a second polarity, a semiconductor layer formed between the source layer and the drain layer, and a contact coupling the gate metallic layer and the body layer.

IPC 1-7

H01L 29/78; H01L 29/786

IPC 8 full level

H01L 27/32 (2006.01); G09F 9/30 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01)

CPC (source: EP KR US)

H10D 30/67 (2025.01 - KR); H10D 30/6706 (2025.01 - EP US); H10D 30/6731 (2025.01 - EP US); H10D 30/6745 (2025.01 - EP US); H10D 30/6746 (2025.01 - EP US); H10D 30/711 (2025.01 - EP US); H10D 30/721 (2025.01 - EP US); H10D 86/00 (2025.01 - EP US)

Citation (search report)

• [X] EP 0816903 A1 19980107 - HITACHI LTD [JP]
• [X] ASSADERAGHI F ET AL: "A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation", ELECTRON DEVICES MEETING, 1994. TECHNICAL DIGEST., INTERNATIONAL SAN FRANCISCO, CA, USA 11-14 DEC. 1994, NEW YORK, NY, USA,IEEE, 11 December 1994 (1994-12-11), pages 809 - 812, XP010131786, ISBN: 0-7803-2111-1

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR

DOCDB simple family (publication)

EP 1508921 A2 20050223; EP 1508921 A3 20050629; CN 1581514 A 20050216; JP 2005064477 A 20050310; KR 100515357 B1 20050915; KR 20050018530 A 20050223; US 2005035343 A1 20050217; US 7274036 B2 20070925

DOCDB simple family (application)

EP 04090312 A 20040812; CN 200410057553 A 20040816; JP 2004203725 A 20040709; KR 20030056594 A 20030814; US 91035004 A 20040804