EP 1514297 A2 20050316 - METHOD FOR EPITAXIAL GROWTH OF A GALLIUM NITRIDE FILM SEPARATED FROM ITS SUBSTRATE
Title (en)
METHOD FOR EPITAXIAL GROWTH OF A GALLIUM NITRIDE FILM SEPARATED FROM ITS SUBSTRATE
Title (de)
VERFAHREN ZUM EPITAXIALWACHSTUM EINES VON SEINEM SUBSTRAT GETRENNTEN GALLIUMNITRIDFILMS
Title (fr)
PROCEDE DE REALISATION PAR EPITAXIE D UN FILM DE NITRURE DE GALLIUM SEPARE DE SON SUBSTRAT
Publication
Application
Priority
- FR 0301615 W 20030528
- FR 0206486 A 20020528
Abstract (en)
[origin: WO03100839A2] The invention concerns the preparation of gallium nitride films by epitaxy with reduced defect density levels. It concerns a method for producing a gallium nitride (GaN) film by epitaxial deposition of GaN. The invention is characterized in that it comprises at least a step of epitaxial lateral overgrowth and in that it comprises a step which consists in separating part of the GaN layer from its substrate by embrittlement through direct ion implantation in the GaN substrate. The invention also concerns the films obtainable by said method as well as the optoelectronic and electronic components provided with said gallium nitride films.
IPC 1-7
IPC 8 full level
C30B 29/38 (2006.01); H01L 21/20 (2006.01); H01L 21/205 (2006.01); H01L 21/265 (2006.01); H01L 21/762 (2006.01); H01S 5/323 (2006.01); H01L 33/00 (2010.01)
CPC (source: EP US)
H01L 21/0242 (2013.01 - EP US); H01L 21/02458 (2013.01 - EP US); H01L 21/0254 (2013.01 - EP US); H01L 21/02579 (2013.01 - EP US); H01L 21/02639 (2013.01 - EP US); H01L 21/76248 (2013.01 - EP US); H01L 21/76254 (2013.01 - EP US); H01L 33/0093 (2020.05 - EP US); Y10S 117/915 (2013.01 - EP US)
Citation (search report)
See references of WO 03100839A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 03100839 A2 20031204; WO 03100839 A3 20040408; AU 2003255613 A1 20031212; AU 2003255613 A8 20031212; EP 1514297 A2 20050316; FR 2840452 A1 20031205; FR 2840452 B1 20051014; JP 2005527978 A 20050915; JP 2010251776 A 20101104; US 2005217565 A1 20051006; US 7488385 B2 20090210
DOCDB simple family (application)
FR 0301615 W 20030528; AU 2003255613 A 20030528; EP 03755219 A 20030528; FR 0206486 A 20020528; JP 2004508396 A 20030528; JP 2010130134 A 20100607; US 51635804 A 20041124