EP 1514298 A1 20050316 - METHOD FOR PRODUCING A SPACER STRUCTURE
Title (en)
METHOD FOR PRODUCING A SPACER STRUCTURE
Title (de)
VERFAHREN ZUR HERSTELLUNG EINER SPACERSTRUKTUR
Title (fr)
PROCEDE POUR PRODUIRE UNE STRUCTURE D'ESPACEMENT
Publication
Application
Priority
- DE 0301551 W 20030514
- DE 10226914 A 20020617
Abstract (en)
[origin: WO03107405A1] The invention relates to a method for producing a spacer structure. According to the inventive method, a gate insulation layer (2) comprising a gate deposition inhibition layer (2A), a gate layer (3) and a covering deposition inhibition layer (4) are formed on a semiconductor substrate (1), and the gate layer (3) and the covering deposition inhibition layer (4) are structured in such a way as to form stacks of gates (G). According to the invention, an insulation layer (6) is selectively deposited using the deposition inhibition layers (2A, 4) in order to form a spacer structure in a highly precise manner.
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/336 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 21/8247 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 27/115 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01)
CPC (source: EP US)
H01L 21/28185 (2013.01 - EP US); H01L 21/28194 (2013.01 - EP US); H01L 29/513 (2013.01 - EP US); H01L 29/518 (2013.01 - EP US)
Citation (search report)
See references of WO 03107405A1
Citation (examination)
- US 6080607 A 20000627 - CHANG CHUN YEN [TW], et al
- ELBEL N ET AL: "A New STI Process Based on Selective Oxide Deposition", VLSI TECHNOLOGY 1998 - SYMPOSIUM ON VLSI TECHNOLOGY - DIGEST OF TECHNICAL PAPERS, 11 June 1998 (1998-06-11), Honululu, Hawaii, pages 208 - 209, XP000802805
Designated contracting state (EPC)
DE FR
DOCDB simple family (publication)
WO 03107405 A1 20031224; CN 100409410 C 20080806; CN 1663025 A 20050831; DE 10226914 A1 20040108; DE 10226914 B4 20060302; EP 1514298 A1 20050316; JP 2005534166 A 20051110; TW 200402109 A 20040201; TW I229389 B 20050311; US 2006084234 A1 20060420; US 7169677 B2 20070130
DOCDB simple family (application)
DE 0301551 W 20030514; CN 03814208 A 20030514; DE 10226914 A 20020617; EP 03737879 A 20030514; JP 2004514124 A 20030514; TW 92113140 A 20030514; US 51920105 A 20050824