EP 1516374 A1 20050323 - REDUCTION IN THE CONTACT RESISTANCE IN ORGANIC FIELD EFFECT TRANSISTORS WITH PALLADIUM CONTACTS BY THE USE OF NITRILES AND ISONITRILES
Title (en)
REDUCTION IN THE CONTACT RESISTANCE IN ORGANIC FIELD EFFECT TRANSISTORS WITH PALLADIUM CONTACTS BY THE USE OF NITRILES AND ISONITRILES
Title (de)
VERRINGERUNG DES KONTAKTWIDERSTANDES IN ORGANISCHEN FELDEFFEKTTRANSISTOREN MIT PALLADIUMKONTAKTEN DURCH VERWENDUNG VON NITRILEN UND ISONITRILEN
Title (fr)
DIMINUTION DE LA RESISTANCE DE CONTACT DANS DES TRANSISTORS A EFFET DE CHAMP ORGANIQUES DOTES DE CONTACT AU PALLADIUM, PAR UTILISATION DE NITRILES ET D'ISONITRILES
Publication
Application
Priority
- DE 0301794 W 20030602
- DE 10228772 A 20020627
Abstract (en)
[origin: WO2004004022A1] The invention relates to a semiconductor device with a semiconductor path made from an organic semiconductor material, a first contact for the injection of charge carriers into the semiconductor path and a second contact for the extraction of charge carriers from the semiconductor path, whereby a layer of a nitrile or an isonitrile is arranged between the first contact and the semiconductor path and/or between the second contact and the semiconductor path. The nitrile or isonitrile acts as charge transfer molecule which facilitates the transfer of charge carriers between contact and organic semiconductor material. The contact resistance between the contact and organic semiconductor material can thus be significantly reduced.
IPC 1-7
IPC 8 full level
H01L 29/74 (2006.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01); H01L 51/10 (2006.01); H01L 51/30 (2006.01); H01L 51/40 (2006.01)
CPC (source: EP US)
H10K 10/84 (2023.02 - EP US); H10K 10/466 (2023.02 - EP US); H10K 10/468 (2023.02 - EP US); H10K 85/611 (2023.02 - EP US); H10K 85/615 (2023.02 - EP US)
Citation (search report)
See references of WO 2004004022A1
Designated contracting state (EPC)
DE
DOCDB simple family (publication)
WO 2004004022 A1 20040108; DE 10228772 A1 20040115; EP 1516374 A1 20050323; US 2005133782 A1 20050623; US 7151275 B2 20061219
DOCDB simple family (application)
DE 0301794 W 20030602; DE 10228772 A 20020627; EP 03729898 A 20030602; US 2019104 A 20041227