EP 1517364 A4 20060607 - SEMICONDUCTOR DEVICE AND ITS PRODUCING METHOD
Title (en)
SEMICONDUCTOR DEVICE AND ITS PRODUCING METHOD
Title (de)
HALBLEITERBAUELEMENT UND VERFAHREN ZU SEINER HERSTELLUNG
Title (fr)
DISPOSITIF A SEMICONDUCTEUR, ET PROCEDE DE FABRICATION
Publication
Application
Priority
JP 0206245 W 20020621
Abstract (en)
[origin: WO2004001839A1] A semiconductor device comprises a substrate, a pad electrode formed on the substrate, and a bump electrode formed on the pad electrode. The pad electrode has a scratch of projections and depressions. A pattern covering the scratch of projections and depressions is formed between the pad electrode and bump electrode.
IPC 1-7
IPC 8 full level
H01L 21/288 (2006.01); H01L 21/60 (2006.01); H01L 23/00 (2006.01); H01L 23/485 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 23/544 (2006.01)
CPC (source: EP US)
H01L 21/2885 (2013.01 - EP US); H01L 23/562 (2013.01 - EP US); H01L 24/03 (2013.01 - EP US); H01L 24/05 (2013.01 - EP US); H01L 24/11 (2013.01 - EP US); H01L 22/34 (2013.01 - EP US); H01L 2224/02125 (2013.01 - EP); H01L 2224/0401 (2013.01 - EP US); H01L 2224/05624 (2013.01 - EP US); H01L 2224/05647 (2013.01 - EP US); H01L 2224/1147 (2013.01 - EP US); H01L 2224/13099 (2013.01 - EP US); H01L 2924/01005 (2013.01 - EP US); H01L 2924/01006 (2013.01 - EP US); H01L 2924/01013 (2013.01 - EP US); H01L 2924/01014 (2013.01 - EP US); H01L 2924/01022 (2013.01 - EP US); H01L 2924/01023 (2013.01 - EP US); H01L 2924/01024 (2013.01 - EP US); H01L 2924/01028 (2013.01 - EP US); H01L 2924/01029 (2013.01 - EP US); H01L 2924/01033 (2013.01 - EP US); H01L 2924/01041 (2013.01 - EP US); H01L 2924/01042 (2013.01 - EP US); H01L 2924/01046 (2013.01 - EP US); H01L 2924/01047 (2013.01 - EP US); H01L 2924/0105 (2013.01 - EP US); H01L 2924/01073 (2013.01 - EP US); H01L 2924/01074 (2013.01 - EP US); H01L 2924/01078 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US); H01L 2924/01082 (2013.01 - EP US); H01L 2924/014 (2013.01 - EP US); H01L 2924/05042 (2013.01 - EP US); H01L 2924/12044 (2013.01 - EP US); H01L 2924/19043 (2013.01 - EP US)
Citation (search report)
- [A] US 6251694 B1 20010626 - LIU HERMEN [TW], et al
- [A] US 6150727 A 20001121 - TAKAGI RYOUICHI [JP]
- [A] PATENT ABSTRACTS OF JAPAN vol. 011, no. 104 (E - 494) 2 April 1987 (1987-04-02)
- See references of WO 2004001839A1
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
WO 2004001839 A1 20031231; CN 100382262 C 20080416; CN 100536103 C 20090902; CN 101145533 A 20080319; CN 1628379 A 20050615; DE 60239493 D1 20110428; EP 1517364 A1 20050323; EP 1517364 A4 20060607; EP 1517364 B1 20110316; JP 3978449 B2 20070919; JP WO2004001839 A1 20051027; KR 100643645 B1 20061110; KR 20040111695 A 20041231; TW 546841 B 20030811; US 2005151250 A1 20050714; US 7095045 B2 20060822
DOCDB simple family (application)
JP 0206245 W 20020621; CN 02829105 A 20020621; CN 200710180733 A 20020621; DE 60239493 T 20020621; EP 02738780 A 20020621; JP 2004515450 A 20020621; KR 20047019063 A 20020621; TW 91114197 A 20020627; US 99818204 A 20041129