EP 1522099 A4 20100915 - METHOD AND WAFER FOR MAINTAINING ULTRA CLEAN BONDING PADS ON A WAFER
Title (en)
METHOD AND WAFER FOR MAINTAINING ULTRA CLEAN BONDING PADS ON A WAFER
Title (de)
VERFAHREN UND WAFER ZUM AUFRECHTERHALTEN ULTRAREINER BONDKONTAKTSTELLEN AUF EINEM WAFER
Title (fr)
PROCEDE ET TRANCHE PERMETTANT DE MAINTENIR DES PLAGES DE CONNEXION ULTRA-PROPRES SUR UNE TRANCHE
Publication
Application
Priority
- SG 0300161 W 20030709
- US 19384202 A 20020712
Abstract (en)
[origin: US6582983B1] The present invention teaches a sawn wafer with ultra clean bonding pads on die which enhance the strength of wire bond and results in higher yield and improved reliability of packaged semiconductor die. Clean wafers ready for dicing are coated with a removable insulating water soluble non-ionic film which enhances clean saw cuts and reduces buildup. The protective film is hardened by heat and resists removal by cooling water used in dicing saws. However, after dicing the protective film is removable in a wafer washer using high pressure warm D.I. water. After removal of the protective film the electrode pads are virtually as clean as before dicing. The film may be used as a protective layer until the sawn wafer is ready for use.
IPC 8 full level
H01L 21/60 (2006.01); H01L 21/78 (2006.01); B28D 5/02 (2006.01); H01L 21/301 (2006.01); H01L 21/304 (2006.01); H01L 21/68 (2006.01); H01L 21/82 (2006.01); H01L 23/485 (2006.01)
CPC (source: EP US)
H01L 21/6835 (2013.01 - EP US); H01L 21/6836 (2013.01 - EP US); H01L 21/78 (2013.01 - EP US); H01L 24/02 (2013.01 - US); H01L 24/05 (2013.01 - EP); H01L 2221/68327 (2013.01 - EP US); H01L 2221/6834 (2013.01 - EP US); H01L 2224/0401 (2013.01 - EP); H01L 2224/45124 (2013.01 - EP US); H01L 2924/00014 (2013.01 - EP US); H01L 2924/01078 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US); H01L 2924/10253 (2013.01 - EP US); H01L 2924/3025 (2013.01 - EP US); Y10S 438/976 (2013.01 - EP US)
Citation (search report)
- [Y] JP 2001102330 A 20010413 - MATSUSHITA ELECTRONICS CORP
- [Y] US 5832585 A 19981110 - TAKIAR HEM [US], et al
- [Y] DE 3037250 A1 19820429 - DUDZIK JOACHIM, et al
- [A] EP 0675536 A1 19951004 - AT & T CORP [US]
- See references of WO 2004008528A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
DOCDB simple family (publication)
US 6582983 B1 20030624; AU 2003253566 A1 20040202; CN 1296988 C 20070124; CN 1650420 A 20050803; EP 1522099 A1 20050413; EP 1522099 A4 20100915; JP 2005533376 A 20051104; MY 138777 A 20090731; RU 2004139016 A 20050727; WO 2004008528 A1 20040122
DOCDB simple family (application)
US 19384202 A 20020712; AU 2003253566 A 20030709; CN 03810113 A 20030709; EP 03764283 A 20030709; JP 2004521369 A 20030709; MY PI20032611 A 20030711; RU 2004139016 A 20030709; SG 0300161 W 20030709