EP 1523025 A2 20050413 - Field emission-type electron source
Title (en)
Field emission-type electron source
Title (de)
Feldemissionselektronenquelle
Title (fr)
Source d'électrons à émission de champ
Publication
Application
Priority
- JP 2002083927 A 20020325
- JP 2002083928 A 20020325
Abstract (en)
A lower electrode (2) and surface electrode (7) composed of a layer-structured conductive carbide layer is formed on one principal surface side of the substrate (1) composed of an insulative substrate such as a glass or ceramic substrate. A non-doped polycrystalline silicon layer (3) is formed on the lower electrode (2). An electron transit layer (6) composed of an oxidized porous polycrystalline silicon is formed on the polycrystalline silicon layer (3). The electron transit layer (6) is composed of a composite nanocrystal layer including polycrystalline silicon and many nanocrystalline silicons residing adjacent to a grain boundary of the polycrystalline silicon. When voltage is applied between the lower electrode (2) and the surface electrode (7) such that the surface electrode (7) has a higher potential, electrons are injected from the lower electrode (2) toward the surface electrode (7), and emitted through the surface electrode (7) through the electron transit layer (6). <IMAGE>
IPC 1-7
IPC 8 full level
H01J 1/312 (2006.01)
CPC (source: EP)
H01J 1/312 (2013.01)
Citation (applicant)
- JP 2987140 B2 19991206
- JP 2001126610 A 20010511 - PIONEER ELECTRONIC CORP
- EP 1117118 A1 20010718 - PIONEER CORP [JP]
- WO 0074098 A1 20001207 - HITACHI LTD [JP], et al
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SK TR
DOCDB simple family (publication)
EP 1523025 A2 20050413; EP 1523025 A3 20050420; EP 1523025 B1 20121219
DOCDB simple family (application)
EP 02022014 A 20021001