EP 1523028 A3 20110601 - Electron beam writing equipment and method
Title (en)
Electron beam writing equipment and method
Title (de)
Vorrichtung und Verfahren zum Elektronenstrahlschreiben
Title (fr)
Dispositif et procédé d'écriture par faisceau d'électrons
Publication
Application
Priority
JP 2003348019 A 20031007
Abstract (en)
[origin: EP1523028A2] The present invention provides a writing technique which can perform high-accuracy overlay writing in electron beam writing equipment performing mark detection by light. Electron beam writing equipment has an electron source (101); an electron optical system illuminating a sample (124) with an electron beam emitted from the electron source, to form a desired pattern on the sample by scanning; a stage (125) mounting the sample; a mark substrate (126) provided on the stage; means (128) beaming a light beam for position detection, which is on the same side as the illumination direction of the electron beam, for illuminating the mark substrate; light detection means (123) which is on the same side as the means beaming a light beam, for detecting light reflected from the mark substrate; and electron detection means which is on the side opposite the light detection means with respect to the mark substrate, for detecting a transmitted electron obtained by illumination of the mark substrate by the electron beam, wherein relative position information of the light beam and the electron beam is obtained based on the signals of the detected reflected light and transmitted electron.
IPC 8 full level
G01B 11/00 (2006.01); G03F 7/20 (2006.01); G03F 9/00 (2006.01); H01J 37/20 (2006.01); H01J 37/304 (2006.01); H01J 37/305 (2006.01); H01J 37/317 (2006.01); H01L 21/027 (2006.01); H01L 21/68 (2006.01)
CPC (source: EP US)
B82Y 10/00 (2013.01 - EP US); B82Y 40/00 (2013.01 - EP US); H01J 37/3045 (2013.01 - EP US); H01J 37/3174 (2013.01 - EP US); H01J 2237/2482 (2013.01 - EP US)
Citation (search report)
- [XY] JP 2002043207 A 20020208 - RIIPURU KK
- [Y] US 6140654 A 20001031 - NAKASUGI TETSURO [JP], et al
- [Y] EP 0333098 A2 19890920 - PERKIN ELMER CORP [US]
- [A] US 5396077 A 19950307 - SOHDA YASUNARI [JP], et al
- [A] US 2002113214 A1 20020822 - YAHIRO TAKEHISA [JP]
- [A] JP S54128288 A 19791004 - HITACHI LTD
- [A] EP 0344646 A2 19891206 - IMS IONEN MIKROFAB SYST [AT]
- [A] US 2001052578 A1 20011220 - OKINO TERUAKI [JP]
- [A] US 6531786 B1 20030311 - YAHIRO TAKEHISA [JP]
- [A] EP 0752715 A1 19970108 - HITACHI LTD [JP]
- [A] US 2002127484 A1 20020912 - NAKASUGI TETSURO [JP]
- [A] US 5168166 A 19921201 - HAYAKAWA HAJIME [JP], et al
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR
Designated extension state (EPC)
AL HR LT LV MK
DOCDB simple family (publication)
EP 1523028 A2 20050413; EP 1523028 A3 20110601; CN 100442435 C 20081210; CN 1606129 A 20050413; JP 2005116731 A 20050428; US 2005072939 A1 20050407; US 7098464 B2 20060829
DOCDB simple family (application)
EP 04023853 A 20041006; CN 200410083227 A 20040929; JP 2003348019 A 20031007; US 95769504 A 20041005