EP 1523698 A1 20050420 - POLYMERIZABLE COMPOSITION, POLYMER, RESIST, AND LITHOGRAPHY METHODS
Title (en)
POLYMERIZABLE COMPOSITION, POLYMER, RESIST, AND LITHOGRAPHY METHODS
Title (de)
POLYMERISIERBARE ZUSAMMENSETZUNG, POLYMER, RESIST UND LITHOGRAPHIEVERFAHREN
Title (fr)
COMPOSITION POLYMERISABLE, POLYMERE, RESERVE ET PROCEDE DE LITHOGRAPHIE
Publication
Application
Priority
- DE 0302502 W 20030721
- DE 10233849 A 20020722
Abstract (en)
[origin: DE10233849A1] A polymerizable composition (I) for the production of a resist (II) contains at least one unsaturated polymerizable monomer having at least one silicon atom and at least one carbonyl group. Independent claims are included for: (1) a polymer (III) prepared by polymerization of the composition (I); (2) a resist (II) comprising 2-30% polymer (III), 70-98% solvent and 0.1 -10% of a photoacid initiator; (3) a lithographic process for the production of a structure on a substrate, preferably a lithographic mask for the production of semiconductor components by use of a resist (II).
IPC 1-7
IPC 8 full level
C08F 30/08 (2006.01); G03F 7/039 (2006.01); G03F 7/075 (2006.01)
CPC (source: EP KR US)
C08F 30/08 (2013.01 - EP KR US); G03F 7/0392 (2013.01 - EP US); G03F 7/075 (2013.01 - KR); G03F 7/0758 (2013.01 - EP US)
Citation (search report)
See references of WO 2004017142A1
Designated contracting state (EPC)
DE FR GB IE IT NL
DOCDB simple family (publication)
DE 10233849 A1 20040219; DE 10233849 B4 20050721; AU 2003250802 A1 20040303; CN 1675589 A 20050928; EP 1523698 A1 20050420; JP 2006509845 A 20060323; KR 100860759 B1 20080929; KR 20050029305 A 20050325; TW 200403525 A 20040301; US 2006063100 A1 20060323; US 7374858 B2 20080520; WO 2004017142 A1 20040226
DOCDB simple family (application)
DE 10233849 A 20020722; AU 2003250802 A 20030721; CN 03817362 A 20030721; DE 0302502 W 20030721; EP 03787737 A 20030721; JP 2004528437 A 20030721; KR 20057001013 A 20050119; TW 92117184 A 20030624; US 52053405 A 20050106