EP 1523762 A2 20050420 - METHOD FOR MAKING AN ANISOTROPIC CONDUCTIVE POLYMER FILM ON A SEMICONDUCTOR WAFER
Title (en)
METHOD FOR MAKING AN ANISOTROPIC CONDUCTIVE POLYMER FILM ON A SEMICONDUCTOR WAFER
Title (de)
VERFAHREN ZUR HERSTELLUNG EINES ANISOTROPISCHEN ELEKTRISCH-LEITENDEN POLYMERFILMS AUF EINE HALBLEITERSCHEIBE
Title (fr)
PROCEDE DE FABRICATION DE FILM POLYMERE CONDUCTEUR ANISOTROPE SUR TRANCHE DE SEMI-CONDUCTEUR
Publication
Application
Priority
- FR 0302312 W 20030722
- FR 0209378 A 20020724
Abstract (en)
[origin: WO2004012226A2] The invention concerns a method for making an anisotropic conductive polymer film (23, 24) on a semiconductor wafer (T) comprising, on one face, a passivation layer (12) wherein is provided at least one opening exposing a bond pad (11). The invention is useful for forming components (chips, integrated circuits) with high interconnect density.
IPC 1-7
IPC 8 full level
H01L 21/288 (2006.01); H01L 21/60 (2006.01); H01L 21/68 (2006.01); H01L 21/768 (2006.01); H01L 23/485 (2006.01); H01L 23/532 (2006.01)
CPC (source: EP US)
H01L 21/2885 (2013.01 - EP US); H01L 21/6835 (2013.01 - EP US); H01L 21/76885 (2013.01 - EP US); H01L 23/5328 (2013.01 - EP US); H01L 24/11 (2013.01 - EP US); H01L 24/13 (2013.01 - EP US); H01L 24/29 (2013.01 - EP US); H01L 24/83 (2013.01 - EP US); H01L 2221/68345 (2013.01 - EP US); H01L 2221/68359 (2013.01 - EP US); H01L 2224/05568 (2013.01 - EP US); H01L 2224/05573 (2013.01 - EP US); H01L 2224/13099 (2013.01 - EP US); H01L 2224/29111 (2013.01 - EP US); H01L 2224/2919 (2013.01 - EP US); H01L 2224/83101 (2013.01 - EP US); H01L 2224/8319 (2013.01 - EP US); H01L 2224/838 (2013.01 - EP US); H01L 2924/0001 (2013.01 - EP US); H01L 2924/00014 (2013.01 - EP US); H01L 2924/01005 (2013.01 - EP US); H01L 2924/01006 (2013.01 - EP US); H01L 2924/01013 (2013.01 - EP US); H01L 2924/01022 (2013.01 - EP US); H01L 2924/01024 (2013.01 - EP US); H01L 2924/01029 (2013.01 - EP US); H01L 2924/01047 (2013.01 - EP US); H01L 2924/01057 (2013.01 - EP US); H01L 2924/01058 (2013.01 - EP US); H01L 2924/01059 (2013.01 - EP US); H01L 2924/01061 (2013.01 - EP US); H01L 2924/01073 (2013.01 - EP US); H01L 2924/01074 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US); H01L 2924/0132 (2013.01 - EP US); H01L 2924/0781 (2013.01 - EP US); H01L 2924/12044 (2013.01 - EP US); H01L 2924/14 (2013.01 - EP US); H01L 2924/30107 (2013.01 - EP US)
Citation (search report)
See references of WO 2004012226A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
DOCDB simple family (publication)
FR 2842943 A1 20040130; FR 2842943 B1 20050701; EP 1523762 A2 20050420; US 2004241932 A1 20041202; US 7026239 B2 20060411; WO 2004012226 A2 20040205; WO 2004012226 A3 20040408
DOCDB simple family (application)
FR 0209378 A 20020724; EP 03748222 A 20030722; FR 0302312 W 20030722; US 48893904 A 20040316