EP 1527012 A2 20050504 - METHOD FOR PRODUCING AT LEAST ONE SMALL OPENING IN A LAYER ON A SUBSTRATE AND COMPONENTS PRODUCED ACCORDING TO SAID METHOD
Title (en)
METHOD FOR PRODUCING AT LEAST ONE SMALL OPENING IN A LAYER ON A SUBSTRATE AND COMPONENTS PRODUCED ACCORDING TO SAID METHOD
Title (de)
VERFAHREN UND HERSTELLUNG WENIGSTENS EINER KLEINEN ÖFFNUNG IN EINER SCHICHT AUF EINEM SUBSTRAT UND DAMIT HERGESTELLTE BAUELEMENTE
Title (fr)
PROCEDE POUR FA ONNER AU MOINS UNE PETITE OUVERTURE DANS UNE COUCHE D'UN SUBSTRAT ET ELEMENTS DE CONSTRUCTION FABRIQUES SELON CE PROCEDE
Publication
Application
Priority
- DE 0302626 W 20030804
- DE 10236150 A 20020805
Abstract (en)
[origin: WO2004014785A2] The invention relates to a method for producing at least one small opening (10) in a layer on a substrate (1), in particular a semiconductor substrate. The substrate (1) is provided on its upper face (2) with at least one pointed recess (6) that has a tip section (4) and lateral walls (5) and the upper face (2) of the substrate (1) is covered at least in the region of the recess (6) with a layer (7) consisting of an etchable material. According to the invention, the opening (10) is produced according to an anisotropic plasma etching method that is adapted to the material of the layer (7), by the selective opening of said layer (7) starting from the upper face (2). The material, etching gases and the etching parameters are selected in such a way that a higher etching rate is achieved in the region of a tip section (9) of the layer (7), which covers the tip section (4) of the substrate (1) than in the region of the lateral walls (8) of the layer (7), which cover the lateral walls (5) of the substrate (1). The invention also relates to calibration standards, cantilever beams and other components produced according to said method.
IPC 1-7
IPC 8 full level
B81B 1/00 (2006.01); B81C 1/00 (2006.01); G01Q 40/02 (2010.01); G01Q 60/18 (2010.01); G01Q 70/16 (2010.01); G12B 21/02 (2006.01); G12B 21/06 (2006.01); G12B 21/20 (2006.01); H01L 21/3065 (2006.01)
CPC (source: EP US)
B81C 1/00087 (2013.01 - EP US); B82Y 20/00 (2013.01 - US); G01Q 40/02 (2013.01 - EP US); G01Q 60/22 (2013.01 - EP US); G01Q 70/16 (2013.01 - EP US); B81B 2201/047 (2013.01 - EP US); B81C 2201/0132 (2013.01 - EP US); Y10T 428/24273 (2015.01 - EP US); Y10T 428/24479 (2015.01 - EP US)
Citation (search report)
See references of WO 2004014785A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2004014785 A2 20040219; WO 2004014785 A3 20050210; DE 10236150 A1 20040226; EP 1527012 A2 20050504; JP 2005535137 A 20051117; US 2006165957 A1 20060727
DOCDB simple family (application)
DE 0302626 W 20030804; DE 10236150 A 20020805; EP 03783954 A 20030804; JP 2004526631 A 20030804; US 52346805 A 20050902