EP 1529305 A2 20050511 - METHOD AND DEVICE FOR SUBSTRATE ETCHING WITH VERY HIGH POWER INDUCTIVELY COUPLED PLASMA
Title (en)
METHOD AND DEVICE FOR SUBSTRATE ETCHING WITH VERY HIGH POWER INDUCTIVELY COUPLED PLASMA
Title (de)
VERFAHREN UND EINRICHTUNG ZUM SUBSTRATÄTZEN MIT INDUKTIV GEKOPPELTEM HÖCHSTLEISTUNGSPLASMA
Title (fr)
PROCEDE ET DISPOSITIF POUR LA GRAVURE DE SUBSTRAT PAR PLASMA INDUCATIF A TRES FORTE PUISSANCE
Publication
Application
Priority
- FR 0302157 W 20030710
- FR 0208729 A 20020711
Abstract (en)
[origin: WO2004008816A2] The invention concerns a method and a system wherein the etching process is carried out in a reaction chamber (1) by acting on a substrate (16) polarized by a polarization generator (15) a plasma generated by a plasma source (4) contained in a sealed wall (5) made of dielectric material enclosed with an inductive coupling antenna (6) fed by a radio frequency generator (7). Control means (13) monitor the solenoid valves (12a, 12b, 12c) and the radio frequency generator (7), so as to produce a preparatory step which consists in gradually establishing plasma excitation power, a step which consists in injecting into the reaction chamber (1) a neutral gas such as argon or nitrogen, and in gradually establishing the power delivered by the radio frequency generator (7) until a nominal power is achieved, thereby avoiding heat shocks liable to destroy the sealed wall (5) of dielectric material, thus enabling use of plasma excitation power levels higher than 3000 watts.
IPC 1-7
IPC 8 full level
H05H 1/46 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01)
CPC (source: EP US)
H01J 37/321 (2013.01 - EP US); H01J 37/32477 (2013.01 - EP US)
Citation (search report)
See references of WO 2004008816A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
DOCDB simple family (publication)
FR 2842388 A1 20040116; FR 2842388 B1 20040924; EP 1529305 A2 20050511; JP 2005532694 A 20051027; US 2006060566 A1 20060323; WO 2004008816 A2 20040122; WO 2004008816 A3 20050310; WO 2004008816 A8 20040527
DOCDB simple family (application)
FR 0208729 A 20020711; EP 03763951 A 20030710; FR 0302157 W 20030710; JP 2004520755 A 20030710; US 51645504 A 20041203