EP 1530236 A2 20050511 - Semiconductor device with multi-layered wiring arrangement including reinforcing patterns, and production method for manufacturing such semiconductor device
Title (en)
Semiconductor device with multi-layered wiring arrangement including reinforcing patterns, and production method for manufacturing such semiconductor device
Title (de)
Halbleiteranordnung mit einer Mehrschicht-Leiterstruktur und mit Verstärkungsmustern, und Herstellungsverfahren der Halbleiteranordnung
Title (fr)
Dispositif semi-conducteur avec une structure conductrice multi-couche comportant des motifs de renforcement, et méthode de production pour la fabrication d'un tel dispositif semi-conducteur
Publication
Application
Priority
JP 2003377040 A 20031106
Abstract (en)
A semiconductor device includes a semiconductor substrate (10) having electronic elements produced therein, and an insulating underlayer (14) formed thereon, and a multi-layered wiring arrangement constructed on the insulating underlayer semiconductor substrate. The multi-layered wiring arrangement includes a first insulating interlayer structure (16) formed on the insulating underlayer, a second insulating interlayer structure (30), and a third insulating interlayer structure (44) formed on the first insulating interlayer structure. Each of the first, second and third insulating interlayer structures includes a low-k insulating layer (16B, 30B, 44B), and has a reinforcing element (28, 48) formed therein. The second insulating interlayer structure has a joint plug (30C) formed therein. The reinforcing elements of the first and third insulating interlayer structures are connected to each other through the joint plug.
IPC 1-7
IPC 8 full level
H01L 23/52 (2006.01); H01L 21/02 (2006.01); H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01)
CPC (source: EP US)
H01L 21/76807 (2013.01 - EP US); H01L 21/76832 (2013.01 - EP US); H01L 23/522 (2013.01 - EP US); H01L 23/53295 (2013.01 - EP US); H01L 23/564 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR
DOCDB simple family (publication)
EP 1530236 A2 20050511; EP 1530236 A3 20061102; CN 100388476 C 20080514; CN 101256988 A 20080903; CN 101256988 B 20101020; CN 1614775 A 20050511; JP 2005142351 A 20050602; US 2005101117 A1 20050512; US 7199042 B2 20070403
DOCDB simple family (application)
EP 04026315 A 20041105; CN 200410088306 A 20041108; CN 200810087116 A 20041108; JP 2003377040 A 20031106; US 98167904 A 20041105