EP 1532694 A2 20050525 - METHOD FOR PRODUCING AN ELECTROMAGNETIC RADIATION-EMITTING SEMICONDUCTOR CHIP AND A CORRESPONDING ELECTROMAGNETIC RADIATION-EMITTING SEMICONDUCTOR CHIP
Title (en)
METHOD FOR PRODUCING AN ELECTROMAGNETIC RADIATION-EMITTING SEMICONDUCTOR CHIP AND A CORRESPONDING ELECTROMAGNETIC RADIATION-EMITTING SEMICONDUCTOR CHIP
Title (de)
VERFAHREN ZUM HERSTELLEN EINES ELEKTROMAGNETISCHE STRAHLUNG EMITTIERENDEN HALBLEITERCHIPS UND ELEKTROMAGNETISCHE STRAHLUNG EMITTIERENDER HALBLEITERCHIP
Title (fr)
PROCEDE DE FABRICATION D'UNE PUCE A SEMICONDUCTEURS EMETTANT UN RAYONNEMENT ELECTROMAGNETIQUE ET PUCE A SEMICONDUCTEURS EMETTANT UN RAYONNEMENT ELECTROMAGNETIQUE
Publication
Application
Priority
- DE 0302786 W 20030821
- DE 10239045 A 20020826
Abstract (en)
[origin: WO2004021457A2] The invention relates to a method for producing a radiation-emitting semiconductor chip based on AlGaInP, comprising the following steps: preparing a substrate; applying a series of semiconductor layers to the substrate, said series of layers containing a photon-emitting active layer, and; applying a transparent decoupling layer comprising Gax(InyAl1-y)1-xP, whereby 0.8 <= x and 0 <= y <= 1. The invention provides that the substrate is made from germanium and that the transparent decoupling layer is applied at a low temperature.
IPC 1-7
IPC 8 full level
H01L 21/205 (2006.01); H01L 33/00 (2010.01); H01L 33/30 (2010.01)
CPC (source: EP US)
H01L 21/02381 (2013.01 - EP US); H01L 21/02543 (2013.01 - EP US); H01L 21/0262 (2013.01 - EP US); H10H 20/0133 (2025.01 - EP US); H10H 20/824 (2025.01 - EP US)
Designated contracting state (EPC)
DE
DOCDB simple family (publication)
WO 2004021457 A2 20040311; WO 2004021457 A3 20041223; CN 100420042 C 20080917; CN 1679176 A 20051005; DE 10239045 A1 20040311; EP 1532694 A2 20050525; JP 2005536896 A 20051202; TW 200405584 A 20040401; TW I224399 B 20041121; US 2006003467 A1 20060105; US 7195991 B2 20070327
DOCDB simple family (application)
DE 0302786 W 20030821; CN 03820260 A 20030821; DE 10239045 A 20020826; EP 03750286 A 20030821; JP 2004531691 A 20030821; TW 92122994 A 20030821; US 52418605 A 20050208