EP 1535336 A2 20050601 - HIGH-DENSITY NROM-FINFET
Title (en)
HIGH-DENSITY NROM-FINFET
Title (de)
HOCHDICHTER NROM-FINFET
Title (fr)
NROM-FINFET A DENSITE ELEVEE
Publication
Application
Priority
- DE 10241170 A 20020905
- EP 0309297 W 20030821
Abstract (en)
[origin: WO2004023519A2] The invention relates to a semiconductor memory comprising a plurality of memory cells, each memory cell comprising the following: a first conductively doped contact area (S/D), a second conductively doped contact area (S/D) and a channel region arranged therebetween, which are embodied in a plate-type rib (FIN) made of a semiconductor material and which are arranged successively in the above-mentioned order in the longitudinal direction of the rib (FIN), said rib (FIN) having a substantially rectangular shape, according to a cross-sectional view extending in a perpendicular manner with respect to the longitudinal direction of the rib (FIN), comprising an upper rib side (10) and opposite lateral rib surfaces (12, 14); a memory layer (18) which is embodied in order to program the memory cell and which is arranged on the upper rib side (10) and distanced by means a first insulating layer (20), said memory layer (18) protruding over at least one (12) of the lateral rib surfaces (12) in a normal direction of one lateral rib surface (12), such that said one lateral rib surface (12) and the upper rib surface (10) form an injection edge (16) for injecting charge carriers from the channel region into the memory layer (18); and at least one gate electrode (WL1) which is distanced by means of a second insulating layer (22) from said one lateral rib surface (12) and distanced by means of a third insulating layer (29) from the memory layer (18), said gate electrode (WL1) being electrically insulated in relation to the channel region and being embodied in order to control the electrical conductivity thereof.
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/336 (2006.01); H01L 21/8246 (2006.01); H01L 21/8247 (2006.01); H01L 21/84 (2006.01); H01L 27/115 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H01R 11/22 (2006.01); H01R 13/62 (2006.01); G11C 16/04 (2006.01)
CPC (source: EP US)
H01L 21/845 (2013.01 - EP US); H01L 27/1203 (2013.01 - EP US); H01L 29/40114 (2019.07 - EP US); H01L 29/40117 (2019.07 - EP US); H01L 29/66825 (2013.01 - EP US); H01L 29/66833 (2013.01 - EP US); H01L 29/7881 (2013.01 - EP US); H01L 29/792 (2013.01 - EP US); H10B 41/30 (2023.02 - EP US); H10B 41/35 (2023.02 - EP); H10B 43/30 (2023.02 - EP US); H10B 69/00 (2023.02 - EP US); G11C 16/0466 (2013.01 - EP US); H01L 29/66795 (2013.01 - EP US); H01L 29/785 (2013.01 - EP US); Y10S 257/903 (2013.01 - EP US); Y10S 257/904 (2013.01 - EP US); Y10S 257/905 (2013.01 - EP US)
Citation (search report)
See references of WO 2004023519A2
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
WO 2004023519 A2 20040318; WO 2004023519 A3 20040610; AU 2003258649 A1 20040329; AU 2003258649 A8 20040329; CN 1689162 A 20051026; DE 10241170 A1 20040318; EP 1535336 A2 20050601; JP 2005538540 A 20051215; TW 200405554 A 20040401; TW I241015 B 20051001; US 2005186738 A1 20050825; US 7208794 B2 20070424
DOCDB simple family (application)
EP 0309297 W 20030821; AU 2003258649 A 20030821; CN 03821241 A 20030821; DE 10241170 A 20020905; EP 03793747 A 20030821; JP 2004533386 A 20030821; TW 92123328 A 20030825; US 7301705 A 20050304