EP 1535338 A2 20050601 - METHOD FOR THE PRODUCTION OF SONOS MEMORY CELLS
Title (en)
METHOD FOR THE PRODUCTION OF SONOS MEMORY CELLS
Title (de)
VERFAHREN ZUR HERSTELLUNG VON SONOS-SPEICHERZELLEN
Title (fr)
PROCEDE POUR FABRIQUER DES CELLULES MEMOIRES SONOS
Publication
Application
Priority
- DE 0302576 W 20030731
- DE 10240893 A 20020904
Abstract (en)
[origin: WO2004025731A2] Disclosed is an Si body (1) in which a ditch (2) is created, the walls (4) of said ditch (2) being provided with a nitrogen implant (6). An oxide layer which is disposed between the source/drain areas (5) and a word line that is applied to the upper face grows thicker than a lower oxide layer of an ONO storage layer that is created on the ditch wall as a gate dielectric. A metal silicide layer can be created on the upper faces of the source/drain areas instead of the nitrogen implant in the ditch walls in order to accelerate oxide growth there.
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/336 (2006.01); H01L 29/792 (2006.01); H10B 20/00 (2023.01); H10B 69/00 (2023.01)
CPC (source: EP US)
H01L 29/40117 (2019.08 - EP US); H01L 29/66833 (2013.01 - EP US); H01L 29/792 (2013.01 - EP US); H01L 29/7926 (2013.01 - EP US); H10B 43/30 (2023.02 - EP US); H10B 69/00 (2023.02 - EP US)
Designated contracting state (EPC)
DE
DOCDB simple family (publication)
WO 2004025731 A2 20040325; WO 2004025731 A3 20040819; DE 10240893 A1 20040318; EP 1535338 A2 20050601; TW 200408067 A 20040516; TW I234240 B 20050611; US 2005196923 A1 20050908; US 7323388 B2 20080129
DOCDB simple family (application)
DE 0302576 W 20030731; DE 10240893 A 20020904; EP 03794774 A 20030731; TW 92121071 A 20030731; US 7269505 A 20050304