EP 1540680 A1 20050615 - N-TYPE METAL OXIDE SEMICONDUCTOR SPECTRALLY SENSITIZED WITH A CATIONIC SPECTRAL SENSITIZER
Title (en)
N-TYPE METAL OXIDE SEMICONDUCTOR SPECTRALLY SENSITIZED WITH A CATIONIC SPECTRAL SENSITIZER
Title (de)
MIT EINEM KATIONISCHEN FARBSTOFF SPEKTRAL SENSIBILISIERTER N-METLLOXIDHALBLEITER
Title (fr)
SEMI-CONDUCTEUR A OXYDE METALLIQUE DE TYPE N SPECTRALEMENT SENSIBILISE PAR UN SENSIBILISATEUR SPECTRAL CATIONIQUE
Publication
Application
Priority
EP 0210269 W 20020912
Abstract (en)
[origin: WO2004025674A1] A layer configuration comprising a layer of a nano-porous n-type metal oxide semiconductor with a band-gap of greater than 2.7 eV, an adsorbed cationic spectral sensitizer and a coadsorber capable of enhancing the adsorption of a cationic spectral sensitizer on an n-type metal oxide semiconductor; and a process for preparing this layer configuration comprising the steps of: providing a layer of a nano-porous n-type metal oxide semiconductor with a band-gap of greater than 2.7 eV, adsorbing a coadsorber on the nano-porous n-type metal oxide semiconductor layer and adsorbing a cationic spectral sensitizer on the nano-porous n-type metal oxide semiconductor layer.
IPC 1-7
IPC 8 full level
H01L 31/04 (2006.01); H01G 9/20 (2006.01); H01M 14/00 (2006.01); H10K 99/00 (2023.01)
CPC (source: EP)
H01G 9/2031 (2013.01); H01G 9/2059 (2013.01); H10K 85/652 (2023.02); H10K 85/341 (2023.02); Y02E 10/542 (2013.01); Y02E 10/549 (2013.01)
Citation (examination)
- EP 0333641 A1 19890920 - SULZER AG [CH]
- H. TRIBUTSH, BER. BUNSENGES., vol. 73, no. 6, 1969, pages 582 - 590
- See also references of WO 2004025674A1
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
WO 2004025674 A1 20040325; AU 2002337090 A1 20040430; EP 1540680 A1 20050615; JP 2005538519 A 20051215
DOCDB simple family (application)
EP 0210269 W 20020912; AU 2002337090 A 20020912; EP 02772296 A 20020912; JP 2004535036 A 20020912