EP 1540713 A1 20050615 - DEFECT REDUCTION IN SEMICONDUCTOR MATERIALS
Title (en)
DEFECT REDUCTION IN SEMICONDUCTOR MATERIALS
Title (de)
DEFEKTVERMINDERUNG IN HALBLEITERMATERIALIEN
Title (fr)
REDUCTION DES DEFAUTS DANS DES MATERIAUX SEMI-CONDUCTEURS
Publication
Application
Priority
- EP 0307604 W 20030711
- IE 20020574 A 20020711
Abstract (en)
[origin: WO2004008509A1] An initial epitaxial layer (2) of GaN is grown on a sapphire substrate (2). The epitaxial layer (2) is then etched in a reactive ion etch (RIE) chamber. This etching acts preferentially at defects (3), causing them to become enlarged cavities (5). The cavities (5) are too large in proportion to the crystal lattice to act as defects in the usual sense, and so a further GaN epitaxial layer fills into the cavities. Thus, propagation of defects is avoided.
IPC 1-7
IPC 8 full level
H01L 21/3065 (2006.01); H01L 21/20 (2006.01); H01L 21/205 (2006.01); H01L 21/306 (2006.01)
CPC (source: EP)
H01L 21/0237 (2013.01); H01L 21/02378 (2013.01); H01L 21/0242 (2013.01); H01L 21/02455 (2013.01); H01L 21/02458 (2013.01); H01L 21/0254 (2013.01); H01L 21/02658 (2013.01); H01L 21/30617 (2013.01); H01L 21/30621 (2013.01)
Citation (search report)
See references of WO 2004008509A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2004008509 A1 20040122; AU 2003254349 A1 20040202; CN 100454486 C 20090121; CN 1675746 A 20050928; EP 1540713 A1 20050615; JP 2005532692 A 20051027
DOCDB simple family (application)
EP 0307604 W 20030711; AU 2003254349 A 20030711; CN 03819794 A 20030711; EP 03763842 A 20030711; JP 2004520620 A 20030711