EP 1540734 A4 20101027 - INTEGRATED CIRCUIT INCLUDING FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURE
Title (en)
INTEGRATED CIRCUIT INCLUDING FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURE
Title (de)
INTEGRIERTE SCHALTUNG MIT FELDEFFEKTTRANSISTOR UND HERSTELLUNGSVERFAHREN
Title (fr)
CIRCUIT INTEGRE COMPRENANT UN TRANSISTOR A EFFET DE CHAMP ET PROCEDE DE FABRICATION DE CELUI-CI
Publication
Application
Priority
- US 0320650 W 20030603
- US 18773702 A 20020702
Abstract (en)
[origin: US6661024B1] An integrated circuit (100, 200, 300, 400) that includes a field effect transistor (102, 202, 302, 402) is fabricated by forming an organic semiconductor channel (112, 216, 308, 418) on one substrate (106, 204), forming device electrodes (114, 116, 110, 208, 210, 212) on one or more other substrates (104, 108, 206), and subsequently laminating the substrates together. In one embodiment, a dielectric patch (214) that functions as a gate dielectric is formed on one of the substrates (204, 206) prior to performing the lamination. Lamination provides a low cost route to device assembly, allows for separate fabrication of different device structures on different substrates, and thins various device layers resulting in improved performance.
IPC 1-7
IPC 8 full level
H01L 29/417 (2006.01); H01L 21/336 (2006.01); H01L 21/338 (2006.01); H01L 29/786 (2006.01); H01L 29/812 (2006.01); H01L 51/05 (2006.01); H01L 51/40 (2006.01); H10N 10/856 (2023.01); H01L 51/00 (2006.01); H01L 51/30 (2006.01)
CPC (source: EP US)
B82Y 10/00 (2013.01 - EP US); H10K 10/468 (2023.02 - EP US); H10K 19/10 (2023.02 - EP US); H10K 71/50 (2023.02 - EP US); H10K 10/462 (2023.02 - EP US); H10K 10/464 (2023.02 - EP US); H10K 10/466 (2023.02 - EP US); H10K 77/111 (2023.02 - EP US); H10K 85/113 (2023.02 - EP US); H10K 85/114 (2023.02 - EP US); H10K 85/211 (2023.02 - EP US); H10K 85/311 (2023.02 - EP US); H10K 85/615 (2023.02 - EP US); H10K 85/621 (2023.02 - EP US)
Citation (search report)
- [XI] US 6197663 B1 20010306 - CHANDROSS EDWIN ARTHUR [US], et al
- [I] WO 9945582 A1 19990910 - OPTICOM AS [NO], et al
- [XI] MACH P ET AL: "Monolithically integrated, flexible display of polymer-dispersed liquid crystal driven by rubber-stamped organic thin-film transistors", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US LNKD- DOI:10.1063/1.1377312, vol. 78, no. 23, 4 June 2001 (2001-06-04), pages 3592 - 3594, XP012028198, ISSN: 0003-6951
- See also references of WO 2004006633A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
DOCDB simple family (publication)
US 6661024 B1 20031209; AU 2003248770 A1 20040123; AU 2003248770 A8 20040123; CN 100359700 C 20080102; CN 1666346 A 20050907; EP 1540734 A2 20050615; EP 1540734 A4 20101027; JP 2005532690 A 20051027; JP 4668613 B2 20110413; WO 2004006633 A2 20040115; WO 2004006633 A3 20040617
DOCDB simple family (application)
US 18773702 A 20020702; AU 2003248770 A 20030603; CN 03815539 A 20030603; EP 03763068 A 20030603; JP 2004519712 A 20030603; US 0320650 W 20030603