EP 1543084 A2 20050622 - PROCESS FOR REDUCING DISHING AND EROSION DURING CHEMICAL MECHANICAL PLANARIZATION
Title (en)
PROCESS FOR REDUCING DISHING AND EROSION DURING CHEMICAL MECHANICAL PLANARIZATION
Title (de)
VERFAHREN FÜR CHEMISCH-MECHANISCHES POLIEREN (CMP) MIT WENIGER DISHING UND EROSION
Title (fr)
PROCEDE SERVANT A REDUIRE LE CINTRAGE ET L'EROSION LORS DE LA PLANARISATION PAR POLISSAGE CHIMICO-MECANIQUE (PROCEDE CMP)
Publication
Application
Priority
- US 0324286 W 20030801
- US 40110902 P 20020805
- US 62777503 A 20030728
Abstract (en)
[origin: WO2004013242A2] This invention is directed to a slurry system and process of metal removal from a substrate. This invention is useful for polishing a microelectronic device. This invention is especially useful for chemical mechanical planarization of a semiconductor wafer. The slurry system of the present invention includes a first slurry and a second slurry, wherein the first slurry has a higher abrasive concentration than the second slurry. The process of the present invention includes a first polish with the first slurry to partially remove metal from the substrate, and a second polish with the second slurry to further remove metal from the substrate
IPC 1-7
IPC 8 full level
C09G 1/02 (2006.01); H01L 21/02 (2006.01); H01L 21/321 (2006.01)
CPC (source: EP KR US)
C09G 1/02 (2013.01 - EP US); H01L 21/02074 (2013.01 - EP US); H01L 21/304 (2013.01 - KR); H01L 21/3212 (2013.01 - EP US)
Citation (search report)
See references of WO 2004013242A2
Citation (examination)
EP 1000995 A1 20000517 - CLARIANT FRANCE SA [FR]
Designated contracting state (EPC)
BE DE FR GB NL
DOCDB simple family (publication)
WO 2004013242 A2 20040212; WO 2004013242 A3 20040603; AU 2003257147 A1 20040223; AU 2003257147 A8 20040223; CN 100412153 C 20080820; CN 1675327 A 20050928; EP 1543084 A2 20050622; JP 2006511931 A 20060406; KR 20050029726 A 20050328; TW 200413489 A 20040801; US 2004077295 A1 20040422; US 2008090500 A1 20080417
DOCDB simple family (application)
US 0324286 W 20030801; AU 2003257147 A 20030801; CN 03818789 A 20030801; EP 03767120 A 20030801; JP 2004526370 A 20030801; KR 20057001960 A 20050203; TW 92121396 A 20030805; US 62777503 A 20030728; US 73551307 A 20070416