EP 1546806 A2 20050629 - RESIST SYSTEM, USE OF A RESIST SYSTEM AND LITHOGRAPHY METHOD FOR THE PRODUCTION OF SEMICONDUCTOR ELEMENTS
Title (en)
RESIST SYSTEM, USE OF A RESIST SYSTEM AND LITHOGRAPHY METHOD FOR THE PRODUCTION OF SEMICONDUCTOR ELEMENTS
Title (de)
RESISTSYSTEM, VERWENDUNG EINES RESISTSYSTEMS UND LITHOGRAPHIEVERFAHREN ZUR HERSTELLUNG VON HALBLEITERBAUELEMENTEN
Title (fr)
SYSTEME DE RESERVE, UTILISATION D'UN SYSTEME DE RESERVE ET PROCEDE DE LITHOGRAPHIE DESTINE A LA FABRICATION DE COMPOSANTS A SEMICONDUCTEURS
Publication
Application
Priority
- DE 0303178 W 20030919
- DE 10246546 A 20020930
Abstract (en)
[origin: WO2004031858A2] The invention relates to a resist system for lithography methods for the production of semiconductor components at wavelengths of 0.1 -150 nm, characterised by at least one polymer or copolymer comprising at least one acid-labile group. The invention also relates to the use of a resist system and a lithography method, whereby it is possible to obtain high sensitivity, especially in the EUV range, and no limitation of the process window occurs by undesirable cross-linking in the resist system, even at high doses of exposure. .
IPC 1-7
IPC 8 full level
G03F 7/004 (2006.01); G03F 7/039 (2006.01); G03F 7/20 (2006.01)
CPC (source: EP)
G03F 7/0045 (2013.01); G03F 7/0392 (2013.01); G03F 7/2004 (2013.01)
Citation (search report)
See references of WO 2004031858A2
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
WO 2004031858 A2 20040415; WO 2004031858 A3 20040701; AU 2003281916 A1 20040423; AU 2003281916 A8 20040423; DE 10246546 A1 20040415; DE 10246546 B4 20061005; EP 1546806 A2 20050629
DOCDB simple family (application)
DE 0303178 W 20030919; AU 2003281916 A 20030919; DE 10246546 A 20020930; EP 03773450 A 20030919