EP 1547135 A1 20050629 - SEMI-CONDUCTOR DIELECTRIC COMPONENT WITH A PRASEODYMIUM OXIDE DIELECTRIC
Title (en)
SEMI-CONDUCTOR DIELECTRIC COMPONENT WITH A PRASEODYMIUM OXIDE DIELECTRIC
Title (de)
HALBLEITERBAULEMENT MIT PRASEODYMOXID-DIELEKTRIKUM
Title (fr)
COMPOSANT SEMI-CONDUCTEUR COMPORTANT UN DIELECTRIQUE OXYDE DE PRASEODYME
Publication
Application
Priority
- DE 10245590 A 20020926
- EP 0310625 W 20030924
Abstract (en)
[origin: WO2004032216A1] The invention relates to a semi-conductor component having a layer containing silicon and a praseodymium oxide layer, whereon a mixed oxide layer containing silicon, praseodymium and oxygen is arranged between the silicon layer and the praseodymium oxide layer. The layer has a maximum thickness of 5 nanometers. The invention also relates to a method for producing one such semi-conductor component. With the aid of the mixed oxide layer, which contains a silicon oxide intermediate layer, the capacity of the component can be improved in relation to components known per se. High charge carrier movement is also obtained without the need for a silicon oxide intermediate layer.
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 29/51 (2006.01)
CPC (source: EP US)
H01L 21/28194 (2013.01 - EP US); H01L 29/513 (2013.01 - EP US); H01L 29/517 (2013.01 - EP US)
Citation (search report)
See references of WO 2004032216A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2004032216 A1 20040415; DE 10245590 A1 20040415; EP 1547135 A1 20050629; US 2006138501 A1 20060629
DOCDB simple family (application)
EP 0310625 W 20030924; DE 10245590 A 20020926; EP 03769314 A 20030924; US 52886805 A 20051013