EP 1547145 A2 20050629 - METHOD FOR THE PRODUCTION OF A COMPOSITE SICOI-TYPE SUBSTRATE COMPRISING AN EPITAXY STAGE
Title (en)
METHOD FOR THE PRODUCTION OF A COMPOSITE SICOI-TYPE SUBSTRATE COMPRISING AN EPITAXY STAGE
Title (de)
HERSTELLUNGSVERFAHREN EINES SICOI-SUBSTRATS MIT EINEM EPITAXIESCHRITT
Title (fr)
PROCEDE DE FABRICATION D' UN SUBSTRAT COMPOSITE DU TYPE SiCOI COMPRENANT UNE ETAPE D' EPITAXIE
Publication
Application
Priority
- FR 0350044 W 20030901
- FR 0210884 A 20020903
Abstract (en)
[origin: FR2844095A1] Fabrication of a composite SiCOI substrate comprises the provision of an initial substrate incorporating a support (1) of Si or SiC supporting a layer (2) of SiO2 carrying a thin film (3) of SiC and the epitaxy of SiC (4) on the thin film of SiC. The epitaxy is realised at the following temperatures: (a) from 1450 degrees C to obtain an epitaxy of polytype 6H or 4H on a carried thin film of polytype 6H or 4H respectively, if the support is of SiC; (b) from 1350 degrees C to obtain an epitaxy of polytype 3C on a carried thin layer of polytype 3C, if the support is of Si or SiC; (c) from 1350 degrees C to obtain an epitaxy of polytype 6H or 4H on a carried thin film of polytype 6H or 4H respectively, if the support is of Si. An Independent claim is also included for a semiconductor device produced on a composite SiCOI substrate obtained.
IPC 1-7
IPC 8 full level
H01L 29/872 (2006.01); C30B 25/02 (2006.01); C30B 29/36 (2006.01); H01L 21/02 (2006.01); H01L 21/20 (2006.01); H01L 21/205 (2006.01); H01L 21/336 (2006.01); H01L 21/338 (2006.01); H01L 21/76 (2006.01); H01L 27/12 (2006.01); H01L 29/47 (2006.01); H01L 29/786 (2006.01); H01L 29/812 (2006.01); H01L 29/861 (2006.01)
CPC (source: EP US)
C30B 25/02 (2013.01 - EP US); C30B 29/36 (2013.01 - EP US); H01L 21/02378 (2013.01 - EP US); H01L 21/02433 (2013.01 - EP US); H01L 21/02447 (2013.01 - EP US); H01L 21/02529 (2013.01 - EP US); H01L 21/2007 (2013.01 - EP US); H01L 21/7602 (2013.01 - EP US)
Citation (search report)
See references of WO 2004027844A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
DOCDB simple family (publication)
FR 2844095 A1 20040305; FR 2844095 B1 20050128; EP 1547145 A2 20050629; JP 2005537678 A 20051208; TW 200416878 A 20040901; US 2006125057 A1 20060615; WO 2004027844 A2 20040401; WO 2004027844 A3 20040521
DOCDB simple family (application)
FR 0210884 A 20020903; EP 03780258 A 20030901; FR 0350044 W 20030901; JP 2004537240 A 20030901; TW 92124198 A 20030902; US 52665705 A 20050302