Global Patent Index - EP 1547159 A1

EP 1547159 A1 20050629 - NANO-POROUS METAL OXIDE SEMICONDUCTOR SPECTRALLY SENSITIZED WITH METAL CHALCOGENIDE NANO-PARTICLES

Title (en)

NANO-POROUS METAL OXIDE SEMICONDUCTOR SPECTRALLY SENSITIZED WITH METAL CHALCOGENIDE NANO-PARTICLES

Title (de)

NANOPORÖSER METALLOXIDHALBLEITER, DER SPEKTRAL MIT KALKOGENIDNANOPARTIKELN SENSIBILISIERT WIRD

Title (fr)

METAL-OXYDE-SEMI-CONDUCTEUR NANOPOREUX SPECTRALEMENT SENSIBILISE A L'AIDE DE NANOPARTICULES DE CHALCOGENURES METALLIQUES

Publication

EP 1547159 A1 20050629 (EN)

Application

EP 03787807 A 20030716

Priority

  • EP 03787807 A 20030716
  • EP 0350313 W 20030716
  • EP 02102129 A 20020813

Abstract (en)

[origin: WO2004017426A1] A nano-porous metal oxide semiconductor with a band-gap of greater than 2.9 eV in-situ spectrally sensitized on its internal and external surface with metal chalcogenide nano-particles with a band-gap of less than 2.9 eV containing at least one metal chalcogenide, characterized in that said nano-porous metal oxide further contains a triazole or diazole compound; and a process for in-situ spectral sensitization of nano-porous metal oxide in semiconductor with a band-gap of greater than 2.9 eV on its internal and external surface with metal chalcogenide nanoparticles with a band-gap of less than 2.9 eV, containing at least one metal chalcogenide, comprising a metal chalcogenide-forming cycle comprising the steps of: contacting the nano-porous metal oxide with a solution of metal ions; and contacting the nano-porous metal oxide with a solution of chalcogenide ions, wherein said solution of metal ions and/or said solution of chalcogenide ions contains a triazole or diazole compound.

IPC 1-7

H01L 31/072; H01L 31/0352

IPC 8 full level

C01G 23/04 (2006.01); H01L 31/0352 (2006.01); H01L 31/04 (2006.01); H01L 31/072 (2012.01); H01M 14/00 (2006.01)

CPC (source: EP)

H01L 31/03529 (2013.01); H01L 31/072 (2013.01); Y02E 10/50 (2013.01)

Citation (search report)

See references of WO 2004017426A1

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

WO 2004017426 A1 20040226; AU 2003262523 A1 20040303; EP 1547159 A1 20050629; JP 2005539349 A 20051222

DOCDB simple family (application)

EP 0350313 W 20030716; AU 2003262523 A 20030716; EP 03787807 A 20030716; JP 2004528512 A 20030716