EP 1548807 B1 20180822 - Method for depositing a group III-nitride material on a silicon substrate and device thereof
Title (en)
Method for depositing a group III-nitride material on a silicon substrate and device thereof
Title (de)
Verfahren zur Abscheidung von einem Gruppe III-Nitrid-Material auf ein Siliziumsubstrat und entsprechende Vorrichtung
Title (fr)
Méthode de dépôt d'un matériau nitrure du groupe III sur un substrat de silicium et dispositif correspondant
Publication
Application
Priority
- EP 04447292 A 20041222
- EP 04447087 A 20040402
- US 53193003 P 20031222
Abstract (en)
[origin: EP1548807A1] The present invention is related to a device comprising a substrate comprising a silicon substrate having a porous top layer, a second layer on said top layer, said second layer made of a material comprising Ge, and a further layer of a Group III-nitride material on the second layer. <??>The present invention further is related to methods of production and to intermediate or template devices highly suitable for the epitaxial growth of a high quality Group III-nitride layer. <IMAGE>
IPC 8 full level
C30B 25/18 (2006.01); C30B 29/08 (2006.01); C30B 29/40 (2006.01); C30B 29/52 (2006.01); H01L 21/20 (2006.01)
CPC (source: EP)
C30B 25/18 (2013.01); C30B 29/08 (2013.01); C30B 29/52 (2013.01); H01L 21/02381 (2013.01); H01L 21/0243 (2013.01); H01L 21/0245 (2013.01); H01L 21/02458 (2013.01); H01L 21/02502 (2013.01); H01L 21/0251 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02658 (2013.01)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
DOCDB simple family (application)
EP 04447292 A 20041222