EP 1550150 A4 20090819 - A DMOS DEVICE WITH A PROGRAMMABLE THRESHOLD VOLTAGE

Title (en)

A DMOS DEVICE WITH A PROGRAMMABLE THRESHOLD VOLTAGE

Title (de)

DMOS-BAUELEMENT MIT PROGRAMMIERBARER SCHWELLENSPANNUNG

Title (fr)

DISPOSITIF MOS A DOUBLE DIFFUSION A TENSION DE SEUIL PROGRAMMABLE

Publication

EP 1550150 A4 20090819 (EN)

Application

EP 03751848 A 20030811

Priority

US 0325108 W 20030811
US 21789302 A 20020813
US 21801002 A 20020813

Abstract (en)

[origin: WO2004015745A2] A DMOS device is provided which is equipped with a floating gate having a first and second electrode in close proximity thereto. The floating gate is separated from one of the first and second electrodes by a thin layer of dielectric material whose dimensions and composition permit charge carriers to tunnel through the dielectric layer either to or from the floating gate. This tunneling phenomenon can be used to create a threshold voltage that may be adjusted to provide a precise current by placing a voltage between a programming electrode and the body/source and gate electrode of the device.

IPC 1-7

G11C 16/04

IPC 8 full level

H01L 21/28 (2006.01); H01L 21/336 (2006.01); H01L 21/8247 (2006.01); H01L 27/115 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/788 (2006.01)

CPC (source: EP KR US)

H01L 29/40114 (2019.07 - EP); H01L 29/42324 (2013.01 - EP KR); H01L 29/66825 (2013.01 - EP KR); H01L 29/7801 (2013.01 - KR); H01L 29/7802 (2013.01 - EP KR US); H01L 29/7813 (2013.01 - EP KR); H01L 29/7883 (2013.01 - EP KR); H10B 41/30 (2023.02 - EP); H10B 69/00 (2023.02 - EP KR)

Citation (search report)

[X] US 4589009 A 19860513 - MOTAMEDI MANOUCHEHR E [US]
[A] JP H08250718 A 19960927 - NIPPON DENSO CO
[A] WO 9705662 A1 19970213 - ZYCAD CORP [US]
[A] EP 0035160 A1 19810909 - ITT IND GMBH DEUTSCHE [DE], et al
[A] WO 0117025 A2 20010308 - INFINEON TECHNOLOGIES AG [DE], et al
[A] WO 9913513 A1 19990318 - IMEC INTER UNI MICRO ELECTR [BE], et al
[A] EP 0205637 A1 19861230 - EATON CORP [US]
See references of WO 2004015745A2

Designated contracting state (EPC)

DOCDB simple family (publication)

WO 2004015745 A2 20040219; WO 2004015745 A3 20040429; AU 2003269956 A1 20040225; AU 2003269956 A8 20040225; EP 1550150 A2 20050706; EP 1550150 A4 20090819; JP 2005536048 A 20051124; KR 20050056200 A 20050614; TW 200405571 A 20040401; TW I320232 B 20100201

DOCDB simple family (application)

US 0325108 W 20030811; AU 2003269956 A 20030811; EP 03751848 A 20030811; JP 2004528026 A 20030811; KR 20057002475 A 20050214; TW 92122157 A 20030812