EP 1552032 A4 20080319 - COPPER SPUTTERING TARGETS AND METHODS OF FORMING COPPER SPUTTERING TARGETS
Title (en)
COPPER SPUTTERING TARGETS AND METHODS OF FORMING COPPER SPUTTERING TARGETS
Title (de)
KUPFER-SPUTTERTARGETS UND VERFAHREN ZUR HERSTELLUNG VON KUPFER-SPUTTERTARGETS
Title (fr)
CIBLES DE PULVERISATION A BASE DE CUIVRE ET PROCEDES DE FORMATION DE CIBLES DE PULVERISATION
Publication
Application
Priority
- US 0322080 W 20030714
- US 39654402 P 20020716
- US 47118203 P 20030515
- US 61480703 A 20030709
Abstract (en)
[origin: WO2004011691A1] The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.
IPC 1-7
IPC 8 full level
B21J 5/00 (2006.01); B21C 23/01 (2006.01); C22C 9/01 (2006.01); C22C 9/02 (2006.01); C22C 9/04 (2006.01); C22C 9/05 (2006.01); C22C 9/06 (2006.01); C22C 9/10 (2006.01); C22F 1/00 (2006.01); C22F 1/08 (2006.01); C23C 14/34 (2006.01); H01L 21/285 (2006.01)
CPC (source: EP KR US)
B21C 23/001 (2013.01 - EP KR US); B21C 23/01 (2013.01 - EP KR US); C22F 1/08 (2013.01 - EP US); C23C 14/14 (2013.01 - KR); C23C 14/3414 (2013.01 - EP KR US); C23C 14/548 (2013.01 - KR); Y10T 428/12118 (2015.01 - EP US)
Citation (search report)
- [X] US 2001023726 A1 20010927 - KOENIGSMANN HOLGER [US], et al
- [X] EP 1036859 A1 20000920 - APPLIED MATERIALS INC [US]
- [A] WO 0236847 A2 20020510 - HONEYWELL INT INC [US]
- [A] US 6113761 A 20000905 - KARDOKUS JANINE K [US], et al
- [A] US 6331234 B1 20011218 - KARDOKUS JANINE K [US], et al
- [A] US 2001035238 A1 20011101 - NAGANO SHOZO [JP], et al
- See references of WO 2004011691A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2004011691 A1 20040205; WO 2004011691 B1 20040422; AU 2003251918 A1 20040216; CN 100529163 C 20090819; CN 1681960 A 20051012; EP 1552032 A1 20050713; EP 1552032 A4 20080319; JP 2005533187 A 20051104; JP 4976013 B2 20120718; KR 101008689 B1 20110117; KR 20050028030 A 20050321; US 2004072009 A1 20040415
DOCDB simple family (application)
US 0322080 W 20030714; AU 2003251918 A 20030714; CN 03822014 A 20030714; EP 03771624 A 20030714; JP 2005505599 A 20030714; KR 20057000760 A 20030714; US 61480703 A 20030709