EP 1554081 A1 20050720 - POST-CMP CLEANING OF SEMICONDUCTOR WAFER SURFACES USING A COMBINATION OF AQUEOUS AND CRYOGENIC CLEANING TECHNIQUES
Title (en)
POST-CMP CLEANING OF SEMICONDUCTOR WAFER SURFACES USING A COMBINATION OF AQUEOUS AND CRYOGENIC CLEANING TECHNIQUES
Title (de)
POST-CMP-REINIGUNG VON HALBLEITERWAFERFLÜCHEN UNTER VERWENDUNG VON WÄSSRIGEN UND KRYOGENEN REINIGUNGSTECHNIKEN
Title (fr)
NETTOYAGE POST-CMP DE LA SURFACE DE TRANCHES DE SEMI-CONDUCTEURS PAR UNE COMBINAISON DE TECHNIQUES AQUEUSES ET CRYOGENIQUES
Publication
Application
Priority
- US 0302643 W 20030128
- US 21585902 A 20020809
Abstract (en)
[origin: US2004029494A1] The present invention provides for a new and improved method of aqueous and cryogenic enhanced (ACE) cleaning for semiconductor surfaces as well as the surfaces of metals, dielectric films particularly hydrophobic low k dielectric films, and CMP etch stop films to remove post-CMP contaminants. It is particularly useful for removing contaminants which are 0.3 mum in size or smaller. The ACE cleaning process is applied to a surface which has undergone chemical-mechanical polishing (CMP). It includes the steps of cleaning the surface with an aqueous-based cleaning process, at least partially drying the surface, and, shortly thereafter, cleaning the surface with a CO2 cryogenic cleaning process. This process removes such contaminants from surfaces which are hydrophobic and hence difficult to clean with aqueous-based cleaning techniques alone.
IPC 1-7
IPC 8 full level
B08B 7/04 (2006.01); B24B 1/00 (2006.01); B08B 3/02 (2006.01); B08B 3/08 (2006.01); B08B 7/00 (2006.01); H01L 21/02 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); H01L 21/3105 (2006.01); H01L 21/321 (2006.01)
CPC (source: EP KR US)
B08B 3/08 (2013.01 - EP US); B08B 7/0092 (2013.01 - EP US); H01L 21/02052 (2013.01 - EP US); H01L 21/02065 (2013.01 - EP US); H01L 21/02074 (2013.01 - EP US); H01L 21/304 (2013.01 - KR); H01L 21/30625 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT SE SI SK TR
DOCDB simple family (publication)
US 2004029494 A1 20040212; AU 2003212854 A1 20040225; CN 100377836 C 20080402; CN 1675028 A 20050928; EP 1554081 A1 20050720; EP 1554081 A4 20100519; JP 2004079992 A 20040311; JP 3786651 B2 20060614; KR 20050055699 A 20050613; TW 200405447 A 20040401; TW I249783 B 20060221; WO 2004014604 A1 20040219
DOCDB simple family (application)
US 21585902 A 20020809; AU 2003212854 A 20030128; CN 03819420 A 20030128; EP 03708894 A 20030128; JP 2003127199 A 20030502; KR 20057002096 A 20050204; TW 92113357 A 20030516; US 0302643 W 20030128