Global Patent Index - EP 1556892 A1

EP 1556892 A1 20050727 - METHOD FOR PRODUCING A TRANSISTOR STRUCTURE

Title (en)

METHOD FOR PRODUCING A TRANSISTOR STRUCTURE

Title (de)

VERFAHREN ZUR HERSTELLUNG EINER TRANSISTORSTRUKTUR

Title (fr)

PROCEDE DE FABRICATION D'UNE STRUCTURE A TRANSISTORS

Publication

EP 1556892 A1 20050727 (DE)

Application

EP 03775086 A 20031024

Priority

  • DE 0303552 W 20031024
  • DE 10250204 A 20021028

Abstract (en)

[origin: WO2004040643A1] The invention relates to a method for producing a transistor structure, comprised of at least one first and one second bipolar transistor with different collector widths. The invention is characterized in that all junctions between differently doped regions have a sharp interface. A first collector region (2.1) is suited for use in a high-frequency transistor having high limit frequencies fT, and a second collector region (2.2) is suited for use in a high-voltage transistor having increased breakdown voltages.

IPC 1-7

H01L 21/8222; H01L 27/082; H01L 29/08

IPC 8 full level

H01L 21/331 (2006.01); H01L 21/8222 (2006.01); H01L 27/082 (2006.01); H01L 29/08 (2006.01)

CPC (source: EP KR US)

H01L 21/18 (2013.01 - KR); H01L 21/8222 (2013.01 - EP KR US); H01L 27/0825 (2013.01 - EP US); H01L 29/0821 (2013.01 - EP US); H01L 29/66272 (2013.01 - EP US)

Citation (search report)

See references of WO 2004040643A1

Designated contracting state (EPC)

DE FR IT

DOCDB simple family (publication)

WO 2004040643 A1 20040513; CN 1331213 C 20070808; CN 1708847 A 20051214; DE 10250204 A1 20040513; DE 10250204 B4 20080430; DE 10250204 B8 20080911; EP 1556892 A1 20050727; JP 2006504276 A 20060202; JP 4358113 B2 20091104; KR 100725618 B1 20070607; KR 20050073594 A 20050714; SG 155055 A1 20090930; TW 200414434 A 20040801; TW I241686 B 20051011; US 2006009002 A1 20060112; US 2008227261 A1 20080918; US 7371650 B2 20080513; US 8003475 B2 20110823

DOCDB simple family (application)

DE 0303552 W 20031024; CN 200380102301 A 20031024; DE 10250204 A 20021028; EP 03775086 A 20031024; JP 2004547420 A 20031024; KR 20057007449 A 20050428; SG 2007029515 A 20031024; TW 92127880 A 20031007; US 5192808 A 20080320; US 53289405 A 20050427