EP 1556908 A2 20050727 - FIELD EFFECT TRANSISTOR ASSEMBLY AND AN INTEGRATED CIRCUIT ARRAY
Title (en)
FIELD EFFECT TRANSISTOR ASSEMBLY AND AN INTEGRATED CIRCUIT ARRAY
Title (de)
FELDEFFEKTTRANSISTOR-ANORDNUNG UND SCHALTKREIS-ARRAY
Title (fr)
ENSEMBLE TRANSISTOR A EFFET DE CHAMP ET RESEAU DE CIRCUITS DE COMMUTATION
Publication
Application
Priority
- DE 0303612 W 20031030
- DE 10250830 A 20021031
Abstract (en)
[origin: WO2004040668A2] The invention relates to a field effect transistor assembly and an integrated circuit array. The field effect transistor assembly contains a substrate, a first wiring plane with a first source/drain region on the substrate and a second wiring plane with a second source/drain region above the first wiring plane. The field effect transistor assembly also comprises at least one vertical nanoelement as a channel region, which is situated between and coupled to both wiring planes. The nanoelement is at least partially surrounded by electrically conductive material, forming a gate region, whereby electrically insulating material is provided between the nanoelement and the electrically conductive material to act as a gate insulating layer.
IPC 1-7
IPC 8 full level
G11C 13/02 (2006.01); H01L 29/78 (2006.01); H01L 51/00 (2006.01); H01L 51/30 (2006.01)
CPC (source: EP US)
B82Y 10/00 (2013.01 - EP US); G11C 13/025 (2013.01 - EP US); H10K 10/462 (2023.02 - EP US); H10K 19/10 (2023.02 - EP US); G11C 2213/17 (2013.01 - EP US); H10K 85/221 (2023.02 - EP US); H10K 85/615 (2023.02 - EP US)
Citation (search report)
See references of WO 2004040668A2
Designated contracting state (EPC)
DE
DOCDB simple family (publication)
WO 2004040668 A2 20040513; WO 2004040668 A3 20040708; DE 10250830 A1 20040519; DE 10250830 B4 20150226; EP 1556908 A2 20050727; US 2005224888 A1 20051013
DOCDB simple family (application)
DE 0303612 W 20031030; DE 10250830 A 20021031; EP 03776825 A 20031030; US 11613905 A 20050427