EP 1561153 A4 20070801 - TEMPERATURE-COMPENSATED CURRENT REFERENCE CIRCUIT
Title (en)
TEMPERATURE-COMPENSATED CURRENT REFERENCE CIRCUIT
Title (de)
TEMPERATURKOMPENSIERTE STROMREFERENZSCHALTUNG
Title (fr)
CIRCUIT DE REFERENCE DE COURANT COMPENSE EN TEMPERATURE
Publication
Application
Priority
- IT TO20020803 A 20020916
- US 0328835 W 20030912
- US 40762203 A 20030403
Abstract (en)
[origin: WO2004025390A2] A current-reference circuit comprises a CMOS differential amplifier having first output node comprising a drain of a first n-channel MOS transistor and a second output node comprising a drain of a second n-channel MOS transistor. A first p-channel MOS transistor has a source coupled to a supply potential, a gate coupled to the second output node, and a drain. A first PNP bipolar transistor has an emitter coupled to the drain of the first p-channel MOS transistor through a first resistor and to a gate of the second n-channel MOS transistor, and a collector and a base both coupled to ground. A second PNP bipolar transistor has an emitter coupled to the drain of the first p-channel MOS transistor through a second resistor in series with a third resistor, and a collector and a base both coupled to ground. The gate of the first n-channel MOS transistor is coupled to a common node between the second and third resistors. A third n-channel MOS transistor has a drain coupled to the drain of the first p-channel MOS transistor, a source coupled to ground through a fourth resistor, and a gate coupled to either a reference potential or to the common node between the second and third resistors.
IPC 8 full level
G05F 1/10 (2006.01); G05F 3/26 (2006.01); G05F 3/02 (2006.01); G05F 3/16 (2006.01); G05F 3/24 (2006.01)
CPC (source: EP KR)
G05F 3/02 (2013.01 - KR); G05F 3/245 (2013.01 - EP)
Citation (search report)
- [X] US 2002125938 A1 20020912 - KIM YOUNG HEE [KR], et al
- [A] US 6292050 B1 20010918 - DOOLEY MICHAEL W [US], et al
- [A] US 5245273 A 19930914 - GREAVES CARLOS A [US], et al
- [A] US 4792748 A 19881220 - THOMAS DAVID M [US], et al
- [A] US 6448844 B1 20020910 - CHO SEONG IK [KR]
- [A] US 6351111 B1 20020226 - LARAIA J MARCOS [US]
- See references of WO 2004025390A2
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
WO 2004025390 A2 20040325; WO 2004025390 A3 20050616; AU 2003267183 A1 20040430; AU 2003267183 A8 20040430; CA 2498780 A1 20040325; EP 1561153 A2 20050810; EP 1561153 A4 20070801; JP 2005539335 A 20051222; KR 20050042824 A 20050510; NO 20051558 L 20050323
DOCDB simple family (application)
US 0328835 W 20030912; AU 2003267183 A 20030912; CA 2498780 A 20030912; EP 03749655 A 20030912; JP 2004572005 A 20030912; KR 20057004509 A 20050316; NO 20051558 A 20050323