EP 1565266 B1 20130410 - FLUIDIC MICROSYSTEM AND METHOD COMPRISING FIELD-FORMING PASSIVATION LAYERS PROVIDED ON MICROELECTRODES
Title (en)
FLUIDIC MICROSYSTEM AND METHOD COMPRISING FIELD-FORMING PASSIVATION LAYERS PROVIDED ON MICROELECTRODES
Title (de)
FLUIDISCHES MIKROSYSTEM UND VERFAHREN MIT FELDFORMENDEN PASSIVIERUNGSSCHICHTEN AUF MIKROELEKTRODEN
Title (fr)
MICROSYSTEME FLUIDIQUE ET PROCEDE COMPORTANT DES COUCHES DE PASSIVATION CREANT DES CHAMPS, APPLIQUEES SUR DES MICROELECTRODES
Publication
Application
Priority
- DE 10255858 A 20021129
- EP 0313319 W 20031126
Abstract (en)
[origin: WO2004050252A1] The invention relates to a fluidic microsystem (100) comprising at least one channel (10) through which a particle suspension can flow, and first and second electrode devices (40, 60) which are arranged on first and second channel walls (21, 31) for producing electrical alternating voltage fields in the channel (10). The first electrode device (40) is provided with at least one first structural element (41, 51) for field formation in the channel, and the second electrode device (60) has a flat electrode layer (61) with a closed second electrode surface carrying a second passivation layer (70). The at least one first structural element (41, 51) forms a small active electrode surface as the second electrode surface, and the second passivation layer (70) is a closed layer which fully covers the second electrode layer (61).
IPC 8 full level
B03C 5/02 (2006.01); B01L 3/00 (2006.01); G01N 15/10 (2006.01)
CPC (source: EP US)
B01L 3/502761 (2013.01 - EP US); B03C 5/026 (2013.01 - EP US); B01L 2200/0647 (2013.01 - EP US); B01L 2200/0652 (2013.01 - EP US); B01L 2200/0668 (2013.01 - EP US); B01L 2300/0645 (2013.01 - EP US); B01L 2300/16 (2013.01 - EP US); B01L 2400/0415 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2004050252 A1 20040617; DE 10255858 A1 20040617; EP 1565266 A1 20050824; EP 1565266 B1 20130410; US 2006024802 A1 20060202; US 7455758 B2 20081125
DOCDB simple family (application)
EP 0313319 W 20031126; DE 10255858 A 20021129; EP 03776918 A 20031126; US 53667405 A 20050729