EP 1565949 A2 20050824 - SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR THE PRODUCTION THEREOF
Title (en)
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR THE PRODUCTION THEREOF
Title (de)
HALBLEITERSPEICHEREINRICHTUNG SOWIE VERFAHREN ZU DEREN HERSTELLUNG
Title (fr)
MEMOIRE A SEMI-CONDUCTEUR ET SON PROCEDE DE PRODUCTION
Publication
Application
Priority
- DE 0303885 W 20031124
- DE 10255117 A 20021126
Abstract (en)
[origin: WO2004049440A2] Disclosed are a semiconductor memory device (1) having a memory effect due to phase transformation and a method for the production thereof, according to which a hollow space arrangement (H) comprising at least one hollow space (H1, H2) that is disposed near the respective memory element (E) is provided for each memory element (E) in a semiconductor substrate (20) such that thermal coupling of the respective memory element (E) to the surroundings thereof is embodied in a reduced manner by lowering thermal conductivity between the memory element (E) and the surroundings.
IPC 1-7
IPC 8 full level
H01L 27/24 (2006.01); H01L 45/00 (2006.01)
CPC (source: EP US)
H10B 63/30 (2023.02 - EP US); H10B 63/82 (2023.02 - EP US); H10N 70/011 (2023.02 - EP US); H10N 70/066 (2023.02 - EP US); H10N 70/231 (2023.02 - EP US); H10N 70/821 (2023.02 - EP US); H10N 70/826 (2023.02 - EP US); H10N 70/8413 (2023.02 - EP US); H10N 70/8616 (2023.02 - EP US); H10N 70/8828 (2023.02 - EP US)
Citation (search report)
See references of WO 2004049440A2
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
WO 2004049440 A2 20040610; WO 2004049440 A3 20041007; AU 2003292985 A1 20040618; AU 2003292985 A8 20040618; DE 10255117 A1 20040617; DE 10394112 D2 20051020; EP 1565949 A2 20050824; US 2005270826 A1 20051208
DOCDB simple family (application)
DE 0303885 W 20031124; AU 2003292985 A 20031124; DE 10255117 A 20021126; DE 10394112 T 20031124; EP 03788820 A 20031124; US 13777805 A 20050526