Global Patent Index - EP 1573395 A2

EP 1573395 A2 20050914 - SCATTEROMETRY ALIGNMENT FOR IMPRINT LITHOGRAPHY

Title (en)

SCATTEROMETRY ALIGNMENT FOR IMPRINT LITHOGRAPHY

Title (de)

STREUUNGSMESSAUSRICHTUNG FÜR DIE DRUCKLITHOGRAPHIE

Title (fr)

ALIGNEMENT PAR DIFFUSIOMETRIE POUR LITHOGRAPHIE PAR EMPREINTE

Publication

EP 1573395 A2 20050914 (EN)

Application

EP 03767009 A 20030731

Priority

  • US 0323948 W 20030731
  • US 21078502 A 20020801
  • US 21078002 A 20020801
  • US 21089402 A 20020801

Abstract (en)

[origin: WO2004013693A2] Described are methods for patterning a substrate by imprint lithography. Imprint lithography is a process in which a liquid is dispensed onto a substrate. A template is brought into contact with the liquid and the liquid is cured. The cured liquid includes an imprint of any patterns formed in the template. Alignment of the template with a previously formed layer on a substrate, in one embodiment, is accomplished by using scatterometry.

IPC 1-7

G03F 1/00

IPC 8 full level

G03F 7/00 (2006.01); G01B 11/00 (2006.01); G01N 21/86 (2006.01); G03F 1/00 (2006.01); G03F 7/20 (2006.01); G03F 9/00 (2006.01)

IPC 8 main group level

G03F (2006.01)

CPC (source: EP)

B82Y 10/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); G03F 7/0002 (2013.01); G03F 9/7049 (2013.01); G03F 9/7065 (2013.01)

Designated contracting state (EPC)

AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

DOCDB simple family (publication)

WO 2004013693 A2 20040212; WO 2004013693 A3 20060119; AU 2003261317 A1 20040223; AU 2003261317 A8 20040223; EP 1573395 A2 20050914; EP 1573395 A4 20100929; JP 2006516065 A 20060615; JP 2011101016 A 20110519; JP 5421221 B2 20140219; KR 20050026088 A 20050314; TW 200406651 A 20040501; TW I266970 B 20061121

DOCDB simple family (application)

US 0323948 W 20030731; AU 2003261317 A 20030731; EP 03767009 A 20030731; JP 2004526254 A 20030731; JP 2010248314 A 20101105; KR 20057001792 A 20050131; TW 92120993 A 20030731