EP 1573743 A2 20050914 - MRAM ARCHITECTURE WITH ELECTRICALLY ISOLATED READ WRITE CIRCUITRY
Title (en)
MRAM ARCHITECTURE WITH ELECTRICALLY ISOLATED READ WRITE CIRCUITRY
Title (de)
MRAM-ARCHITEKTUR MIT ELEKTRISCH ISOLIERTEN LESE-SCHREIB-SCHALTKREISEN
Title (fr)
ARCHITECTURE MRAM AVEC CIRCUITS DE LECTURE-ECRITURE A ISOLATION ELECTRIQUE
Publication
Application
Priority
- US 0313094 W 20030429
- US 18586802 A 20020628
Abstract (en)
[origin: US2004001358A1] A magnetoresistive random access memory (MRAM) has separate read and write paths. This reduces the peripheral circuitry by not requiring switching between read and write functions on a particular line. By having the paths dedicated to either read signals or write signals, the voltage levels can be optimized for these functions. The select transistors, which are part of only the read function, may be of the low-voltage type because they do not have to receive the relatively higher voltages of the write circuitry. Similarly, the write voltages do not have to be degraded to accommodate the lower-voltage type transistors. The size of the overall memory is kept efficiently small while improving performance. The memory cells are grouped so that adjacent to groups are coupled to a common global bit line which reduces the space required for providing the capacitance-reducing group approach to memory cell selection.
IPC 1-7
IPC 8 full level
G11C 11/16 (2006.01)
CPC (source: EP KR US)
G11C 11/00 (2013.01 - KR); G11C 11/15 (2013.01 - KR); G11C 11/16 (2013.01 - US); G11C 11/1655 (2013.01 - EP); G11C 11/1673 (2013.01 - EP); G11C 11/1675 (2013.01 - EP)
Citation (search report)
See references of WO 2004003921A2
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
DOCDB simple family (publication)
US 2004001358 A1 20040101; US 6903964 B2 20050607; AT E416460 T1 20081215; AU 2003228725 A1 20040119; CN 100437818 C 20081126; CN 1757076 A 20060405; DE 60325089 D1 20090115; EP 1573743 A2 20050914; EP 1573743 B1 20081203; JP 2006508481 A 20060309; KR 20050009763 A 20050125; TW 200409116 A 20040601; TW I310552 B 20090601; US 2005152183 A1 20050714; US 7154772 B2 20061226; WO 2004003921 A2 20040108; WO 2004003921 A3 20051124
DOCDB simple family (application)
US 18586802 A 20020628; AT 03726492 T 20030429; AU 2003228725 A 20030429; CN 03815272 A 20030429; DE 60325089 T 20030429; EP 03726492 A 20030429; JP 2004517525 A 20030429; KR 20047021254 A 20030429; TW 92117683 A 20030627; US 0313094 W 20030429; US 7652305 A 20050309