EP 1573804 A4 20060308 - METHODS OF FORMING STRUCTURE AND SPACER AND RELATED FINFET
Title (en)
METHODS OF FORMING STRUCTURE AND SPACER AND RELATED FINFET
Title (de)
VERFAHREN ZUR BILDUNG EINER STRUKTUR UND EINES ABSTANDSELEMENTS UND DIESBEZÜGLICHER FINFET
Title (fr)
PROCEDES DE FORMATION D'UNE STRUCTURE ET D'UN ESPACEUR, FINFET CORRESPONDANT
Publication
Application
Priority
US 0240869 W 20021219
Abstract (en)
[origin: WO2004059727A1] Methods for forming a spacer (44) for a first structure (24, 124), such as a gate structure of a FinFET, and at most a portion of a second structure (14), such as a fin, without detrimentally altering the second structure. The methods generate a first structure (24) having a top portion (30, 130) that overhangs an electrically conductive lower portion (32, 132) and a spacer (44) under the overhang (40, 140). The overhang (40, 140) may be removed after spacer processing. Relative to a FinFET, the overhang protects parts of the fin (14) such as regions adjacent and under the gate structure (24, 124) , and allows for exposing sidewalls of the fin (14) to other processing such as selective silicon growth and implantation. As a result, the methods allow sizing of the fin (14) and construction of the gate structure (24, 124) and spacer without detrimentally altering (e.g., eroding by forming a spacer thereon) the fin (14) during spacer processing. A FinFET (100) including a gate structure (24, 124) and spacer (44) is also disclosed.
IPC 8 full level
H01L 21/84 (2006.01); H01L 21/265 (2006.01); H01L 21/336 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01)
CPC (source: EP)
H01L 21/26586 (2013.01); H01L 21/823437 (2013.01); H01L 29/42384 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01)
Citation (search report)
- [X] WO 0169686 A1 20010920 - INFINEON TECHNOLOGIES AG [DE], et al
- [X] US 6492212 B1 20021210 - IEONG MEIKEI [US], et al
- [X] US 5994192 A 19991130 - CHEN CHUN-YAO [TW]
- [A] US 6051485 A 20000418 - SCHINDLER GUENTHER [DE], et al
- [A] US 5567639 A 19961022 - CHANG SU-JAW [TW]
- [A] US 2002135041 A1 20020926 - KUNIKIYO TATSUYA [JP]
- [A] US 5899746 A 19990504 - MUKAI MIKIO [JP]
- See references of WO 2004059727A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR IE IT LI LU MC NL PT SE SI SK TR
DOCDB simple family (publication)
WO 2004059727 A1 20040715; AU 2002364088 A1 20040722; CN 1320641 C 20070606; CN 1714441 A 20051228; EP 1573804 A1 20050914; EP 1573804 A4 20060308; JP 2006511092 A 20060330; JP 4410685 B2 20100203
DOCDB simple family (application)
US 0240869 W 20021219; AU 2002364088 A 20021219; CN 02830043 A 20021219; EP 02798557 A 20021219; JP 2004563141 A 20021219