EP 1575082 A3 20060531 - Method for forming a self-aligned germanide structure
Title (en)
Method for forming a self-aligned germanide structure
Title (de)
Verfahren zur Herstellung einer selbstjustierten Germanide-Struktur
Title (fr)
Procédé de formation d'une structure auto-alignée à base de germaniure
Publication
Application
Priority
US 55154304 P 20040308
Abstract (en)
[origin: US2005196962A1] A method for removing unreacted metal from a germanium layer, a germanide layer and or a dielectric material. The method includes removing the unreacted metal using a chemical composition that includes one or more hydrohalides, such as in an aqueous form. In certain embodiments, the chemical composition may also include H<SUB>2</SUB>SO<SUB>4</SUB>. Also, in certain embodiments, the chemical composition may be heated to increase the etch rate of the unreacted metal and/or improve the etch selectivity to the germanium, the germanide and/or the dielectric material.
IPC 8 full level
C23F 1/30 (2006.01); H01L 21/3213 (2006.01); C23F 1/28 (2006.01); C23F 1/44 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/302 (2006.01); H01L 21/306 (2006.01); H01L 21/335 (2006.01); H01L 21/336 (2006.01); H01L 21/461 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP US)
C23F 1/28 (2013.01 - EP US); C23F 1/44 (2013.01 - EP US); H01L 21/28518 (2013.01 - EP US); H01L 21/28525 (2013.01 - EP US); H01L 21/30604 (2013.01 - EP US); H01L 21/32134 (2013.01 - EP US); H01L 29/0847 (2013.01 - EP US); H01L 29/665 (2013.01 - EP US); H01L 29/7834 (2013.01 - EP US)
Citation (search report)
- [X] US 3708360 A 19730102 - WAKEFIELD R, et al
- [XA] US 2003207127 A1 20031106 - MURTHY ANAND [US], et al
- [XA] US 5608266 A 19970304 - AGNELLO PAUL D [US], et al
- [X] YU D S ET AL: "FULLY SILICIDED NISI AND GERMANIDED NIGE DUAL GATES ON SIO2 N- AND P-MOSFETS", IEEE ELECTRON DEVICE LETTERS, IEEE SERVICE CENTER, NEW YORK, NY, US, vol. 24, no. 12, December 2003 (2003-12-01), pages 739 - 741, XP001186512, ISSN: 0741-3106
- [X] PATENT ABSTRACTS OF JAPAN vol. 009, no. 233 (C - 304) 19 September 1985 (1985-09-19)
- [X] BASIUK E. V.: "Spontaneous anisotropic etching of the InP(100) surface in concentrated hydrochloric and sulfuric acids", SURFACE AND COATINGS TECHNOLOGY, vol. 67, no. 1-2, September 1994 (1994-09-01), pages 51 - 54, XP008062620
- [DA] YU D. S. ET AL.: "Al2O3-Ge-on-Insulator n- and p- MOSFETs with fully NiSi and NiGe Dual Gates", IEEE ELECTRON DEVICE LETTERS, vol. 25, no. 3, 3 March 2004 (2004-03-03), pages 138 - 140, XP002375742
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR
DOCDB simple family (publication)
US 2005196962 A1 20050908; EP 1575082 A2 20050914; EP 1575082 A3 20060531; JP 2005256173 A 20050922
DOCDB simple family (application)
US 7902205 A 20050308; EP 04447208 A 20040924; JP 2005060607 A 20050304