EP 1576669 A1 20050921 - POWER INTEGRATED CIRCUITS
Title (en)
POWER INTEGRATED CIRCUITS
Title (de)
INTEGRIERTE LEISTUNGSSCHALTKREISE
Title (fr)
CIRCUITS INTEGRES DE PUISSANCE
Publication
Application
Priority
- GB 0305367 W 20031209
- GB 0228754 A 20021210
- GB 0228755 A 20021210
Abstract (en)
[origin: WO2004053993A1] A monolithic integrated circuit comprising at least one relatively deep trench (14) etched into the rear or lower surface of a semiconductor wafer (1) to create a membrane in or on which low voltage logic circuitry for control and protection may be provided. At least one power device area (10) is also provided adjacent to the trench (14). The or each trench (14) is covered with an insulating material (3) and then filled with another material (4). A second, relatively shallow trench (12) is provided on the front or upper surface of the semiconductor wafer (1), in communication with the layer of insulating material (3) and located between adjacent devices or a power device (10) and the low voltage circuitry (2). A monolithic integrated circuit comprising a semiconductor (SOI) wafer is also disclosed.
IPC 1-7
IPC 8 full level
H01L 21/762 (2006.01); H01L 21/84 (2006.01); H01L 27/088 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP US)
H01L 21/76283 (2013.01 - EP); H01L 21/84 (2013.01 - EP); H01L 27/088 (2013.01 - EP US); H01L 27/1203 (2013.01 - EP); H01L 29/0657 (2013.01 - EP); H01L 29/7395 (2013.01 - EP); H01L 29/7802 (2013.01 - EP US); H01L 29/7813 (2013.01 - EP)
Citation (search report)
See references of WO 2004053993A1
Designated contracting state (EPC)
AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR
DOCDB simple family (publication)
WO 2004053993 A1 20040624; AU 2003288446 A1 20040630; EP 1576669 A1 20050921
DOCDB simple family (application)
GB 0305367 W 20031209; AU 2003288446 A 20031209; EP 03780365 A 20031209