EP 1579019 A2 20050928 - HIGH PURITY NICKEL/VANADIUM SPUTTERING COMPONENTS; AND METHODS OF MAKING SPUTTERING COMPONENTS
Title (en)
HIGH PURITY NICKEL/VANADIUM SPUTTERING COMPONENTS; AND METHODS OF MAKING SPUTTERING COMPONENTS
Title (de)
ZERSTÄUBUNGSELEMENTE AUS HOCHREINEM NICKEL/VANADIUM UND VERFAHREN ZUR HERSTELLUNG VON ZERSTÄUBUNGSELEMENTEN
Title (fr)
COMPOSANTS DE PULVERISATION NICKEL/VANADIUM DE PURETE ELEVEE ET PROCEDE DE FABRICATION DE COMPOSANTS DE PULVERISATION
Publication
Application
Priority
- US 0337463 W 20031124
- US 43216602 P 20021209
Abstract (en)
[origin: US2004108028A1] The invention includes sputtering components, such as sputtering targets, comprising high-purity Ni-V. The sputtering components can have a fine average grain size throughout, with an exemplary fine average grain size being a grain size less than or equal to 40 microns. The invention also includes methods of making high-purity Ni-V structures.
IPC 1-7
IPC 8 full level
C22C 19/03 (2006.01); C22F 1/10 (2006.01); C23C 14/00 (2006.01); C23C 14/34 (2006.01); C25B 11/00 (2006.01); H01L 21/203 (2006.01)
IPC 8 main group level
C01G (2006.01)
CPC (source: EP KR US)
C22C 19/03 (2013.01 - EP KR US); C23C 14/3414 (2013.01 - EP KR US); H01J 37/3426 (2013.01 - EP KR US)
Citation (search report)
See references of WO 2004052785A2
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
US 2004108028 A1 20040610; AU 2003291159 A1 20040630; AU 2003291159 A8 20040630; CN 1723292 A 20060118; EP 1579019 A2 20050928; JP 2006509109 A 20060316; KR 20050085232 A 20050829; TW 200418996 A 20041001; US 2005230013 A1 20051020; WO 2004052785 A2 20040624; WO 2004052785 A3 20050616; WO 2004052785 B1 20050721
DOCDB simple family (application)
US 72023103 A 20031125; AU 2003291159 A 20031124; CN 200380105352 A 20031124; EP 03783754 A 20031124; JP 2004559157 A 20031124; KR 20057009819 A 20050531; TW 92134690 A 20031209; US 0337463 W 20031124; US 14859605 A 20050608