EP 1581965 A2 20051005 - SEMICONDUCTOR CHIP STACK AND METHOD FOR PASSIVATING A SEMICONDUCTOR CHIP STACK
Title (en)
SEMICONDUCTOR CHIP STACK AND METHOD FOR PASSIVATING A SEMICONDUCTOR CHIP STACK
Title (de)
HALBLEITERCHIPSTAPEL UND VERFAHREN ZUR PASSIVIERUNG EINES HALBLEITERCHIPSTAPELS
Title (fr)
EMPILEMENT DE PUCES A SEMICONDUCTEUR ET PROCEDE DE PASSIVATION D'UN EMPILEMENT DE PUCES A SEMICONDUCTEUR
Publication
Application
Priority
- DE 0303961 W 20031202
- DE 10300711 A 20030110
Abstract (en)
[origin: WO2004064139A2] The invention relates to a semiconductor chip stack, wherein an intermediate gap between the semiconductor chips (1,2) is filled at least along the edge of the top side of the top chip (2) by a spacer (7) made of a photostructurable polymer, a photo-resist of a casting compound or an adhesive and thus outwardly sealed. Terminal contact surfaces (5) for bond wires (6) or other external connections are kept free from the material of said spacer on the top side of the bottom chip (1).
IPC 1-7
IPC 8 full level
H01L 21/56 (2006.01); H01L 25/065 (2006.01)
CPC (source: EP US)
H01L 21/563 (2013.01 - EP US); H01L 25/0657 (2013.01 - EP US); H01L 2224/16145 (2013.01 - EP US); H01L 2224/4847 (2013.01 - EP US); H01L 2224/73203 (2013.01 - EP US); H01L 2225/0651 (2013.01 - EP US); H01L 2225/06517 (2013.01 - EP US); H01L 2225/06527 (2013.01 - EP US); H01L 2924/01004 (2013.01 - EP US); H01L 2924/01079 (2013.01 - EP US)
C-Set (source: EP US)
Citation (search report)
See references of WO 2004064139A2
Designated contracting state (EPC)
DE FR
DOCDB simple family (publication)
WO 2004064139 A2 20040729; WO 2004064139 A3 20050421; DE 10300711 A1 20040722; DE 10300711 B4 20071004; EP 1581965 A2 20051005; US 2006001177 A1 20060105; US 7229851 B2 20070612
DOCDB simple family (application)
DE 0303961 W 20031202; DE 10300711 A 20030110; EP 03788833 A 20031202; US 18003905 A 20050711